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参数资料
| 型号： | IRS21956SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC DVR HI SIDE/DUAL LOW 20-SOIC |
| 标准包装： | 36 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 300ns |
| 电流 - 峰： | 500mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SOIC（宽型） |
| 包装： | 管件 |
IRS21956S
Static Electrical Characteristics
(V CC -COM) = (V B -V S )=15V. TA = 25oC. The V IN , V IN TH and I IN parameters are referenced to V SS . The V O and
I O parameters are referenced to respective VS, COM and are applicable to the respective output leads HO3,
LO. The V CCUV parameters are referenced to COM. The V BSUV parameters are referenced to V S . The V DDUV
parameters are referenced to V SS .
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
V DDUV+
V DDUV-
V DD supply undervoltage positive
going threshold
V DD supply undervoltage negative
going threshold
4.0
3.9
V CCUV+
V CCUV-
V BSUV+
V BSUV-
V CC supply undervoltage positive
going threshold
V CC supply undervoltage negative
going threshold
V BS supply undervoltage positive
going threshold
V BS supply undervoltage negative
going threshold
7.8
7.2
7.8
7.2
8.7
8.0
8.7
8.0
9.6
8.8
9.6
8.8
V
I LK1
I LK2
I QDD
I QBS
I QCC
V IH
V IL
I IN +
I IN -
Io+_
HO3, LO
Io-_
HO3, LO
V OL _
HO3, LO
V OH _
HO3, LO
DV exp+
High side floating well offset supply
leakage current
High side floating well offset supply
leakage current
Quiescent VDD supply current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input voltage
Logic “0” input voltage
Logic “1” input bias current
Logic “0” input bias current
Output high short circuit pulsed
current
Output low short circuit pulsed
current
Low level output voltage
High level output voltage, Vbias-Vo
Positive DV input threshold for
exponential ramp
---
---
---
---
---
---
3.5
---
---
---
---
---
---
---
---
---
---
145
65
1
5
---
---
5
0
0.5
0.5
35
15
10
50
50
250
120
1.5
7
---
0.8
---
---
---
---
150
80
---
uA
uA
uA
mA
mA
V
uA
A
mV
V
V B = V S = 600V
V DD = V SS = 300V
IN1, 2, 3 = 0Vor 5V
HIN3 = 5V or 0V
LIN1, 2 = 0V,
RES=130kohm
LIN1, 2 = 5V,
RES=130kohm
V IN = 5V
V IN = 0V
V O =15V,V IN =5V,
PW<=10us
V O =0V,V IN =0V,
PW<=10us
Io=2mA
Io=2mA
C REF =1nF, V SE open R RES
=130K
www.irf.com
9
? 2008 International Rectifier
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| IRS21962SPBF | IC DVR HI SIDE DUAL 600V 16-SOIC |
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| IRS2302SPBF | IC DRIVER HALF-BRIDGE 8SOIC |
| IRS2304PBF | IC DRIVER HALF-BRIDGE 600V 8-DIP |
| IRS2308PBF | IC DRIVER HALF-BRIDGE 600V 8-DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21956STRPBF | 功能描述:功率驱动器IC Dual Drvr IC w/ floating Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21962 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Dual channel high-side drivers with floating input |
| IRS21962SPBF | 功能描述:功率驱动器IC DUAL CH HI-SIDE DRVR 600V 0.5A 90ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21962STRPBF | 功能描述:功率驱动器IC Dual Hi Side Drvr W/floating input RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2301PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
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