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参数资料
| 型号： | IRS2334SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 23/33页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 36 |
| 系列： | * |
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IRS2334SPbF/MPbF
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients
at the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such
conditions, it is recommended to 1) minimize the high-side source to low-side collector distance, and 2) minimize
the low-side emitter to negative bus rail stray inductance. However, where negative V S spikes remain excessive,
further steps may be taken to reduce the spike. This includes placing a resistor (5 ? or less) between the V S pin
and the switch node (see Figure 25), and in some cases using a clamping diode between COM and V S (see
Figure 26). See DT04-4 at www.irf.com for more detailed information.
V B
HO
C BS
DC+ BU
V B
HO
C BS
DC+ BU
V S
L
R VS
T
Load
V S
L
R VS
D VS
T
Load
CO
DC- BU
Figure 25: V S resistor
CO
DC- BU
Figure 26: V S clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
Parameter Temperature Trends
Figures 27-44 provide information on the experimental performance of the IRS2334 HVIC. The line plotted in
each figure is generated from actual experimental data. A small number of individual samples were tested at
three temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the experimental curve. The line labeled
Exp. consist of three data points (one data point at each of the tested temperatures) that have been
connected together to illustrate the understood temperature trend. The individual data points on the curve
were determined by calculating the averaged experimental value of the parameter (for a given temperature).
www.irf.com
23
? 2010 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IRS2453DPBF | IC DRIVER FULL SELF OSC 14-DIP |
| IRS25091SPBF | IC MOSFET DRIVER |
| IRS2509SPBF | IC MOSFET DRIVER |
| IRS26072DSPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
| IRS2607DSTRPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2334STRPBF | 功能描述:功率驱动器IC Gen5 HVIC 600V 35A 3 Phase Gt Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2336 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364D | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS23364DJPBF | 制造商:International Rectifier 功能描述:Driver IC |
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