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| 型号： | IRS26072DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 18/30页 |
| 文件大小： | 0K |
| 描述： | IC DVR HI/LOW SIDE 600V SOIC-8 |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 200ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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IRS26072DSPbF
Figure 14: D3 conducting
Figure 15: Q4 conducting
However, in a real inverter circuit, the V S voltage swing does not stop at the level of the negative DC bus, rather it
swings below the level of the negative DC bus. This undershoot voltage is called “negative V S transient”.
The circuit shown in Figure 16 depicts one leg of the three phase inverter; Figures 17 and 18 show a simplified
illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit
from the die bonding to the PCB tracks are lumped together in L C and L E for each IGBT. When the high-side
switch is on, V S1 is below the DC+ voltage by the voltage drops associated with the power switch and the parasitic
elements of the circuit. When the high-side power switch turns off, the load current momentarily flows in the low-
side freewheeling diode due to the inductive load connected to V S1 (the load is not shown in these figures). This
current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative
voltage between V S1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the V S
pin).
Figure 16: Parasitic Elements
Figure 17: V S positive
Figure 18: V S negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative V S transient
voltage can exceed this range during some events such as short circuit and over-current shutdown, when di/dt is
greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding
applications. An indication of the IRS26072D’s robustness can be seen in Figure 19, where there is represented
the IRS26072D Safe Operating Area at V BS =15V based on repetitive negative V S spikes. A negative V S transient
voltage falling in the grey area (outside SOA) may lead to IC permanent damage; vice versa unwanted functional
anomalies or permanent damage to the IC do not appear if negative Vs transients fall inside SOA.
www.irf.com
18
? 2009 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2607DSPBF | 功能描述:功率驱动器IC 600V High Low 10 to 20V 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2607DSPBF | 制造商:International Rectifier 功能描述:DRIVER |
| IRS2607DSTRPBF | 功能描述:功率驱动器IC Half Bridge Drvr Hi Volt & Hi Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2608DSPBF | 功能描述:功率驱动器IC 600V Half-Bridge 10 to 20V 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2608DSPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
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