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| 型号： | IRSF3011 |
| 厂商： | International Rectifier |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | IC LOW SIDE DRIVER TO-220AB |
| 标准包装： | 50 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 200 毫欧 |
| 电流 - 输出 / 通道： | 7A |
| 电流 - 峰值输出： | 16A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRSF3011 |
IRSF3011
10
1
T = 150°C
T = 25°C
2000
1750
1500
1250
1000
750
500
250
0
Vdd=25V
Ids = 4A
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
25
50
75
100
125
150
Source to Drain Voltage (Volts)
Figure 17 Source-Drain Diode Forward Voltage
Starting Junction Temperature (°C)
Figure 18 Unclamped Single Pulse Inductive Energy to
Failure vs. Starting Junction Temperature
Application Information
Introduction
Protected monolithic POWER MOSFETs offer simple,
cost effective solutions in applications where ex-
treme operating conditions can occur. The margin
between the operating conditions and the absolute
maximum values can be narrowed, resulting in
better utilization of the device and lower cost. ESD
protection also reduces the off-circuit failures during
handling and assembly.
General Description
The IRSF3011 is a fully protected monolithic N-
channel logic level POWER MOSFET with 200mW
(max) on-resistance. The built-in protections include
over-current, over-temperature, ESD and over-volt-
age.
The over-current and over-temperature protections
make the IRSF3011 / IRSF3012 indestructible under
any load conditions in switching or in linear applica-
tions. The built-in ESD protection minimizes the risk
of ESD damage when the device is off-circuit. The
IRSF3011 / IRSF3012 is fully characterized for
avalanche operation and can be used for fast de-
energization of inductive loads.
10
The TO-220 packaged IRSF3011 / IRSF3012 offers
an easy upgrade with direct pin-to-pin replacement
from non-protected devices.
Block Diagram
As illustrated in figure A1, a zener diode between the
input and the source provides the ESD protection for
the input and also limits the voltage applied to the
input to 10V.
The R-S flip-flop memorizes the occurrence of an
error condition and controls the Q2 and Q3 switches.
The flip-flop can be cleared by holding the input low
for the specified minimum duration.
COMP1 and COMP2 comparators are used to com-
pare the over-current and over-temperature signals
with the built-in reference. Either comparator can
reset the fault flip-flop and turn Q1 off. During fault
condition, Q2 disconnects the gate of Q1 from the
input, and Q3 shorts the gate and source of Q1,
resulting in rapid turn-off of Q1. The zener diode
between the gate and drain of Q1 turns Q1 on when
the drain to source voltage exceeds 55V.
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRSF3011F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-220VAR |
| IRSF3011L | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
| IRSF3011LTR | 功能描述:IC DRIVER LO SIDE 50V 5A SOT-223 RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
| IRSF3011S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | TO-252VAR |
| IRSF3012 | 功能描述:IC DRIVER LO SIDE 50V 7A TO220AB RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
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