参数资料
型号: IRU3048CSTR
厂商: International Rectifier
文件页数: 7/18页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 16-SOIC
标准包装: 1
PWM 型: 电压模式
输出数: 3
频率 - 最大: 220kHz
占空比: 90%
电源电压: 4.2 V ~ 25 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
包装: 剪切带 (CT)
产品目录页面: 1384 (CN2011-ZH PDF)
其它名称: *IRU3048CSTR
IRU3048CSCT
IRU3048
For D i 1 =25% of I 1 , we get L 1 =9.9 m H
For D i 2 =25% of I 2 , we get: L 2 =5.7 m H
Panasonic provides a range of inductors in different val-
ues and low profile for large currents.
For L 1 choose ETQP6F102HFA (10.2 m H, 4A)
For L 2 choose ELLATV6R8M (6.8 m H, 4A)
Power MOSFET Selection
The selections criteria to meet power transfer require-
ments is based on maximum drain-source voltage (V DSS ),
The total conduction losses for channel 1 is:
P CON1 = 1.1W
The total conduction losses for channel 2 is:
P CON2 = 1.1W
The control MOSFET contributes to the majority of the
switching losses in synchronous Buck converter. The
synchronous MOSFET turns on under zero-voltage con-
dition, therefore the turn on losses for synchronous
MOSFET can be neglected. With a linear approxima-
tion, the total switching loss can be expressed as:
gate-source drive voltage (V GS ), maximum output cur-
rent, On-resistance R DS(ON) and thermal management.
P SW =
V DS(OFF)
2
t r + t f
3
T
3 I LOAD
---(6)
The MOSFET must have a maximum operating voltage
(V DSS ) exceeding the maximum input voltage (V IN ).
The gate drive requirement is almost the same for both
MOSFETs. Caution should be taken with devices at very
low V GS to prevent undesired turn-on of the complemen-
tary MOSFET, which results a shoot-through current.
The total power dissipation for MOSFETs includes con-
duction and switching losses. For the Buck converter
the average inductor current is equal to the DC load cur-
rent. The conduction loss is defined as:
2
P COND (Upper Switch) = I LOAD 3 R DS(ON) 3 D 3q
2
P COND (Lower Switch) = I LOAD 3 R DS(ON) 3 (1 - D) 3q
Where:
V DS(OFF) = Drain to Source Voltage at off time
t r = Rise Time
t f = Fall Time
T = Switching Period
I LOAD = Load Current
V DS
90%
10%
V GS
q = R DS(ON) Temperature Dependency
t d (ON)
t r
t d (OFF)
t f
The total conduction loss is defined as:
P CON(TOTAL) =P CON (Upper Switch) q +P CON (Lower Switch) q
The R DS(ON) temperature dependency should be consid-
ered for the worst case operation. This is typically given
in the MOSFET data sheet. Ensure that the conduction
losses and switching losses do not exceed the package
ratings or violate the overall thermal budget.
Figure 4 - Switching time waveforms.
From IRF7313 data sheet we obtain:
IRF7313
t r = 13ns
t f = 26ns
These values are taken under a certain condition test.
For more detail please refer to the IRF7313 data sheet.
For this design, IRF7313 is a good choice. These de-
vices provide low on-resistance in a compact SOIC 8-
Pin package.
The MOSFETs have the following data:
IRF7313
V DSS = 30V
I D = 5.2A @ 70 8 C
R DS(ON) = 46m V @ V GS =4.5V
q = 1.5 for 150 8 C (Junction Temperature)
By using equation (6), we can calculate the switching
losses.
P SW1 = 187.2mW
P SW2 = 78mW
Rev. 1.7
09/12/02
www.irf.com
7
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