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参数资料
| 型号： | IS10200G |
| 厂商： | ISOCOM LTD |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | PLASTIC, DIP-4 |
| 文件页数： | 2/3页 |
| 文件大小： | 64K |
| 代理商： | IS10200G |
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +85°C
260°C for 5s, 1.6mm from case
11000Vpeak
Input Diode
Forward DC Current:
Reverse DC Voltage:
Peak forward current:
Power Dissipation:
Derate Linearly:
60mA
4V
3A (1 p.w. 300pps)
100mW
1.67mW/°C above 25°C
Output Transistor
Collector-emitter voltage BVCEO:
Emitter-collector voltage BVECO:
Collector Current IC:
Power Dissipation:
Derate Linearly:
30V
7V
100mA
150mW
2.50mW/°C above 25°C
Electro-optical Characteristics (Ta=25°C)
INPUT
PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
CI
Capacitance
f=1MHz, VO=O
30
pF
VF
Forward voltage
IF=60mA
1.7
V
IR
Reverse current
VR=3.0V
1
A
VR
Reverse Breakdown Voltage
IR=10A
4
V
BVCEO
Collector-emitter Voltage
IC=1mA, IF=0
30
V
OUTPUT
BVECO
Emitter-collector Voltage
IE=100A, IF=0
6
V
IECO
Collector-emitter Dark Current
VCE=10V, IB=0
5
100 nA
CCE
Collector-emitter Capacitance
VCE=5V, f=1MHz
3.3
pF
IC/IF
DC Current Transfer Ratio
IF=10mA, VCE=10V
IS11000
100
%
IS10500
50
%
IS10200
20
%
COUPLED PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
RIO
Input-to-output Isolation
Resistance
VIO=500V, (note1)
100
Gohm
VCE(SAT)
Collector-emitter Saturation
Voltage
IF=10mA, IC=0.5mA
0.4
V
CIO
Capacitance Input to Output
f=1MHz (note1)
0.5
pF
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