参数资料
型号: IS23SC1604-X2
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: PROM
英文描述: 16-KBIT SECURED SERIAL EEPROM
中文描述: 2K X 8 3-WIRE SERIAL EEPROM, UUC7
封装: WAFER
文件页数: 15/18页
文件大小: 76K
代理商: IS23SC1604-X2
IS23SC1604
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION NV002-0D
01/19/99
ISSI
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(1)
Symbol
Parameter
Min.
Max.
Unit
Vcc
Supply Voltage
–0.3
6
V
VI / VO
Input/Output Voltage
–0.3
6
V
TSTG
Storage Temperature
–40
125
oC
PMAX
Power Dissipation
60
mV
Note:
1. Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Operating Range
Range
Ambient Temperature
Vcc
Commercial
0 to +70
°C5V
Industrial
–40 to +85
°C5V
Capacitance(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25
°C, VCC = 5.0V + 10%; GND = 0V, f = 1 MHz.
DC Electrical Characteristics(1) (TA = 0 to 70
°C, Vcc = 5.0 + 10%, GND = 0V )
Symbol
Parameter
Test Condtions
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
ICC
Supply Read/Compare Current
TA = 25
°C,
3.0
mA
FCLK = 300 KHz
ICCP
Supply Write/Erase Current
TA = 25
°C
4.0
mA
ICCSB
Standby Supply Current
TA = 25
°C,
8.0
A
RST = 5V; FUS, CLK, PGM = 0V, IIO = 0
A
VIL
Input Low Level
–0.3
0.8
V
VIH
Input High Level
2.0
Vcc + 0.3
V
VOL
Output Low Level
IOL = 1 mA
0.4
V
ILI
Input Leakage Current
50
A
ILH
I/O Leakage Current
VOH = 5V Open Drain
50
A
Note:
1. There is a internal pull-up on pin RST. There are internal pull-downs on pins FUS, CLK, and PGM
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