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参数资料
| 型号： | IS24C02B-2GLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | PROM |
| 英文描述： | 1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM |
| 中文描述： | 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, GREEN, SOIC-8 |
| 文件页数： | 6/20页 |
| 文件大小： | 340K |
| 代理商： | IS24C02B-2GLI |
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
11/10/08
IS24C01B IS24C02B
DC ELECTRICAL CHARACTERISTICS
Industrial (Ta = -40oC to +85oC)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
Vol1
Output Low Voltage
Vcc = 1.8V, Iol = 0.15 mA
—
0.2
V
Vol2
Output Low Voltage
Vcc = 2.5V, Iol = 3 mA
—
0.4
V
VIh
Input High Voltage
Vcc x 0.7 Vcc + 0.5
V
VIl
Input Low Voltage
–1.0
Vcc x 0.3
V
IlI
Input Leakage Current
VIn = Vcc max.
—
3
A
Ilo
Output Leakage Current
—
3
A
notes: VIl min and VIh max are reference only and are not tested.
POWER SUPPLy CHARACTERISTICS
Industrial (Ta = -40oC to +85oC)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
Icc1
Operating Current
Read at 400 KHz (Vcc = 5V)
—
2.0
mA
Icc2
Operating Current
Write at 400 KHz (Vcc = 5V)
—
3.0
mA
Isb1
Standby Current
Vcc = 1.8V
—
1
A
Isb2
Standby Current
Vcc = 2.5V
—
2
A
Isb3
Standby Current
Vcc = 5.0V
—
6
A
ABSOLUTE MAXIMUM RATInGS(1)
Symbol Parameter
Value
Unit
Vs
Supply Voltage
–0.5 to +6.5
V
Vp
Voltage on Any Pin
–0.5 to Vcc + 0.5
V
TbIas
Temperature Under Bias
–55 to +125
°C
TsTg
Storage Temperature
–65 to +150
°C
IouT
Output Current
5
mA
notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause per-
manent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITAnCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
cIn
Input Capacitance
VIn = 0V
6
pF
couT
Output Capacitance
VouT = 0V
8
pF
notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°c, f = 1 MHz, Vcc = 5.0V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS24C02B-2GLI-TR | 功能描述:电可擦除可编程只读存储器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| IS24C02B-2PI | 功能描述:电可擦除可编程只读存储器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| IS24C02B-2PLI | 功能描述:电可擦除可编程只读存储器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| IS24C02B-2ZI | 功能描述:电可擦除可编程只读存储器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| IS24C02B-2ZI-TR | 功能描述:电可擦除可编程只读存储器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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