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参数资料
| 型号： | IS41C16256-60TI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封装： | 0.400 INCH, MS-24, TSOP2-40/44 |
| 文件页数： | 7/20页 |
| 文件大小： | 215K |
| 代理商： | IS41C16256-60TI |
IS41C16256
IS41LV16256
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
7
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
-35
-50
-60
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max. Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
45
—
—
—
25
15
4
4
25
10
0
6
0
5
19
—
25
10
12
10K
—
10K
—
—
17
—
—
—
—
—
60
—
—
—
35
20
6
5
35
11
0
6
0
6
30
—
35
10
18
10K
—
10K
—
—
28
—
—
—
—
—
90
—
—
—
50
30
8
8
50
19
0
8
0
8
40
—
50
14
25
10K
—
10K
—
—
36
—
—
—
—
—
110
—
—
—
60
40
10
10
60
20
0
10
0
10
40
—
60
15
30
10K
—
10K
—
—
45
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
8
12
0
7
3
5
2
0
10
10
5
0
0
20
—
—
—
—
—
12
8
—
—
—
—
—
10
18
0
8
3
5
3
0
10
10
5
0
0
20
—
—
—
—
—
12
10
—
—
—
—
—
14
25
0
14
3
5
3
0
10
10
5
0
0
25
—
—
—
—
—
12
15
—
—
—
—
—
15
30
0
15
3
5
3
—
10
10
5
0
0
30
—
—
—
—
—
12
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
0
—
0
—
ns
t
WCH
t
WCR
5
19
—
—
5
30
—
—
8
—
—
10
50
—
—
ns
ns
40
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
t
DHR
5
10
7
5
0
19
—
—
—
—
—
—
5
10
8
8
0
30
—
—
—
—
—
—
8
—
—
—
—
—
—
10
10
15
15
0
40
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
10
14
14
0
40
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41C16256C | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH EDO PAGE MODE |
| IS41C16256C-35TLI | 功能描述:动态随机存取存储器 4M, 5V, EDO 动态随机存取存储器 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube |
| IS41C16256C-35TLI-TR | 功能描述:动态随机存取存储器 4M, 5V, EDO 动态随机存取存储器 Async,256Kx16,35ns RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube |
| IS41C16257 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16257-35K | 制造商:Integrated Silicon Solution Inc 功能描述: |
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