参数资料
型号: IS41C44002A
英文描述: 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 4米× 4(16兆)动态与江户页面模式内存
文件页数: 3/20页
文件大小: 297K
代理商: IS41C44002A
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
3
IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
CAS
WE
O
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
MEMORY ARRAY
4,194,304 x 4
R
D
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
I/O0-I/O3
RAS
R
A0-A10
RAS
CLOCK
GENERATOR
REFRESH
COUNTER
ADDRESS
BUFFERS
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
EDO Page-Mode Read 1st Cycle:
RAS
H
L
L
L
L
L
L
L
L
L
L
H
L
L
H
L
L
H
L
CAS
H
L
L
L
H
L
H
L
H
L
H
L
H
L
H
L
L
L
H
L
WE
X
H
L
H
L
H
H
L
L
H
L
H
L
H
L
X
H
OE
X
L
X
L
H
L
L
X
X
L
H
L
H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
D
OUT
D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
IN
High-Z
High-Z
2nd Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
Write
(1)
EDO Page-Mode Write
EDO Page-Mode
Read-Write
Hidden Refresh
RAS
-Only Refresh
CBR Refresh
Note:
1.
EARLY WRITE only.
相关PDF资料
PDF描述
IS41C44002AS(L) 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002A 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002AS(L) 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002 4Mx4 bit Dynamic RAM with EDO Page Mode
IS41C44004 4Mx4 bit Dynamic RAM with EDO Page Mode
相关代理商/技术参数
参数描述
IS41C44002AS(L) 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002C 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:16Mb DRAM WITH EDO PAGE MODE
IS41C44004 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44004-50J 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM
IS41C44004-50JI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE