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| 型号： | IS41C44002AS(L) |
| 英文描述： | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4（16兆）动态与江户页面模式内存 |
| 文件页数： | 6/20页 |
| 文件大小： | 297K |
| 代理商： | IS41C44002AS(L) |
6
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
5
Max.
Unit
I
IL
Input Leakage Current
Any input 0V
≤
V
IN
≤
Vcc
Other inputs not under test = 0V
5
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V
≤
V
OUT
≤
Vcc
I
OH
=
5.0 mA with V
CC
=5V
I
OH
=
2.0 mA with V
CC
=3.3V
5
5
μA
V
OH
Output High Voltage Level
2.4
V
V
OL
Output Low Voltage Level
I
OL
= 4.2 mA with V
CC
=5V
I
OL
= 2 mA with V
CC
=3.3V
0.4
V
I
CC
1
Standby Current: TTL
RAS
,
CAS
≥
V
IH
5V
3.3V
2
2
mA
I
CC
2
Standby Current: CMOS
RAS
,
CAS
≥
V
CC
0.2V
5V
3.3V
1
mA
0.5
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
CAS
,
Address Cycling, t
RC
= t
RC
(min.)
-50
-60
120
110
mA
I
CC
4
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
CAS
,
Cycling t
PC
= t
PC
(min.)
-50
-60
90
80
mA
I
CC
5
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
CAS
Cycling
t
RC
= t
RC
(min.)
-50
-60
120
110
mA
I
CC
S
Self Refresh current
(6)
Self Refresh Mode
5V,nromal version
5V, L version
3.3V, normal version
3.3, L version
500
350
450
350
μA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
6. I
CCS
is for S version only.
相关PDF资料 |
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|---|---|
| IS41LV44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41C44002C | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:16Mb DRAM WITH EDO PAGE MODE |
| IS41C44004 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44004-50J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41C44004-50JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44004-50T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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