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参数资料
| 型号： | IS41LV16100S-45TI |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100万× 16（16兆）动态与江户页面模式内存 |
| 文件页数： | 3/20页 |
| 文件大小： | 533K |
| 代理商： | IS41LV16100S-45TI |
IS41C16100S
IS41LV16100S
Integrated Circuit Solution Inc.
3
DR004-0B
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
D
OUT
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, D
OUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, D
OUT
Write: Word (Early Write)
L
L
L
L
X
ROW/COL
D
IN
Write: Lower Byte (Early Write)
L
L
H
L
X
ROW/COL
Lower Byte, D
IN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, D
IN
Read-Write
(1,2)
L
L
L
H
→
L
L
→
H
ROW/COL
D
OUT
, D
IN
EDO Page-Mode Read
(2)
1st Cycle:
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
H
L
ROW/COL
D
OUT
2nd Cycle:
L
H
L
NA/COL
D
OUT
Any Cycle:
L
H
L
NA/NA
D
OUT
EDO Page-Mode Write
(1)
1st Cycle:
L
L
X
ROW/COL
D
IN
2nd Cycle:
L
L
X
NA/COL
D
IN
EDO Page-Mode
(1,2)
1st Cycle:
L
H
→
L
H
→
L
L
→
H
L
→
H
ROW/COL
D
OUT
, D
IN
Read-Write
2nd Cycle:
Read
(2)
L
→
H
→
L
Write
(1,3)
L
→
H
→
L
L
NA/COL
D
OUT
, D
IN
Hidden Refresh
L
L
H
L
ROW/COL
D
OUT
L
L
L
X
ROW/COL
D
OUT
RAS
-Only Refresh
L
H
H
X
X
ROW/NA
High-Z
CBR Refresh
(4)
H
→
L
L
L
X
X
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. EARLY WRITE only.
4. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV16100S-50K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16257-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257S-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV1665 | 64K x16 bit Dynamic RAM with Fast Page Mode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV16100S-50K | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50KI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60K | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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