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参数资料
| 型号： | IS41LV1665 |
| 英文描述： | 64K x16 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 64K的x16位动态随机存储器和快速页面模式 |
| 文件页数： | 7/19页 |
| 文件大小： | 388K |
| 代理商： | IS41LV1665 |
IC41C1665
IC41LV1665
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
7
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
Any input 0V
≤
V
IN
≤
Vcc
Other inputs not under test = 0V
Output is disabled (Hi-Z)
0V
≤
V
OUT
≤
Vcc
I
OH
= –5 mA
I
OL
= +4.2 mA
–10
10
μA
I
IO
Output Leakage Current
–10
10
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC
1
Stand-by Current: TTL
RAS
,
LCAS
,
UCAS
≥
V
IH
5V
—
2
mA
mA
mA
mA
mA
mA
mA
I
CC
1
Stand-by Current: TTL
RAS
,
LCAS
,
UCAS
≥
V
IH
3.3V
—
1
I
CC
2
I
CC
2
I
CC
3
Stand-by Current: CMOS
Stand-by Current: CMOS
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
≥
V
CC
– 0.2V
RAS
,
LCAS
,
UCAS
≥
V
CC
– 0.2V
RAS
,
LCAS
,
UCAS
,
Address Cycling, t
RC
= t
RC
(min.)
5V
3.3V
-25
-30
-35
-40
-25
-30
-35
-40
-25
-30
-35
-40
-25
-30
-35
-40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0.5
170
150
130
120
170
150
130
120
170
150
130
120
170
150
130
120
I
CC
4
Operating Current:
Fast Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
LCAS
,
UCAS
,
Cycling t
PC
= t
PC
(min.)
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
LCAS
,
UCAS
≥
V
IH
t
RC
= t
RC
(min.)
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
Cycling
t
RC
= t
RC
(min.)
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper
device operation is assured.The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is
exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each fast page cycle.
5. Enables on-chip refresh and address counters.
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| IS41LV1665-40K | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV44002-50JI | x4 EDO Page Mode DRAM |
| IS41LV44002-50T | x4 EDO Page Mode DRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV1665-40K | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV32256 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28PQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-30PQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 EDO Page Mode DRAM |
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