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参数资料
| 型号： | IS41LV32256-30PQ |
| 英文描述： | x32 EDO Page Mode DRAM |
| 中文描述： | X32号，江户页面模式的DRAM |
| 文件页数： | 7/19页 |
| 文件大小： | 157K |
| 代理商： | IS41LV32256-30PQ |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
06/24/01
7
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
t
RWL
t
CWL
t
WCS
t
DHR
t
ACH
Parameter
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 24)
Output Disable Delay from
WE
CAS
Setup Time (CBR REFRESH)
(20, 25)
CAS
Hold Time (CBR REFRESH)
( 21, 25)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Auto Refresh Period
Min.
13
8
0
39
15
Max.
—
—
—
—
—
Min.
15
10
0
39
15
Max.
—
—
—
—
—
Units
ns
ns
ns
ns
ns
t
OEH
8
—
10
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
8
—
—
—
—
0
10
133
77
—
—
—
—
ns
ns
ns
ns
108
64
t
CWD
t
AWD
t
PC
26
39
20
—
—
—
32
47
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
50
—
56
100K
30
—
60
—
68
100K
35
—
ns
ns
ns
t
COH
t
OFF
5
0
—
12
5
0
—
15
ns
ns
t
WHZ
t
CSR
t
CHR
t
ORD
3
5
8
0
10
—
—
—
3
5
10
0
10
—
—
—
ns
ns
ns
ns
t
REF
2,048 Cycles
4,096 Cycles
—
—
1
32
64
50
—
—
1
32
64
50
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
ns
AC TEST CONDITIONS
Output load:
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V
Two TTL Loads and 50 pF
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV32256-30TQ | x32 EDO Page Mode DRAM |
| IS41LV32256-35PQ | x32 EDO Page Mode DRAM |
| IS41LV32256-35TQ | x32 EDO Page Mode DRAM |
| IS41LV44002-50J | x4 EDO Page Mode DRAM |
| IS41LV82002-50JI | x8 EDO Page Mode DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV32256-30TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-35PQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-35TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV4100 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-35J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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