- 您现在的位置：买卖IC网 > PDF目录360983 > IS41LV32256-35PQ x32 EDO Page Mode DRAM PDF资料下载
参数资料
| 型号： | IS41LV32256-35PQ |
| 英文描述： | x32 EDO Page Mode DRAM |
| 中文描述： | X32号，江户页面模式的DRAM |
| 文件页数： | 4/19页 |
| 文件大小： | 157K |
| 代理商： | IS41LV32256-35PQ |
4
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
06/24/01
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–
1.0 to +7.0
–
0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
–
1.0 to +7.0
–
0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°
C
T
STG
Storage Temperature
–
55 to +125
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
5.0
3.3
5.5
3.6
V
3.3V
V
IH
Input High Voltage
5V
2.4
2.0
—
—
V
CC
+ 1.0
V
CC
+ 0.3
V
3.3V
V
IL
Input Low Voltage
5V
–
1.0
–
0.3
—
—
0.8
0.8
V
3.3V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
0
—
—
70
85
°
C
°
C
-40
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz.
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV32256-35TQ | x32 EDO Page Mode DRAM |
| IS41LV44002-50J | x4 EDO Page Mode DRAM |
| IS41LV82002-50JI | x8 EDO Page Mode DRAM |
| IS41LV82002-50T | x8 EDO Page Mode DRAM |
| IS41LV82002-50TI | x8 EDO Page Mode DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV32256-35TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV4100 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-35J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
发布紧急采购，3分钟左右您将得到回复。