参数资料
型号: IS41LV44004-60J
英文描述: x4 EDO Page Mode DRAM
中文描述: x4 EDO公司页面模式的DRAM
文件页数: 7/19页
文件大小: 157K
代理商: IS41LV44004-60J
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. D
06/24/01
7
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
t
RWL
t
CWL
t
WCS
t
DHR
t
ACH
Parameter
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 24)
Output Disable Delay from
WE
CAS
Setup Time (CBR REFRESH)
(20, 25)
CAS
Hold Time (CBR REFRESH)
( 21, 25)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Auto Refresh Period
Min.
13
8
0
39
15
Max.
Min.
15
10
0
39
15
Max.
Units
ns
ns
ns
ns
ns
t
OEH
8
10
ns
t
DS
t
DH
t
RWC
t
RWD
0
8
0
10
133
77
ns
ns
ns
ns
108
64
t
CWD
t
AWD
t
PC
26
39
20
32
47
25
ns
ns
ns
t
RASP
t
CPA
t
PRWC
50
56
100K
30
60
68
100K
35
ns
ns
ns
t
COH
t
OFF
5
0
12
5
0
15
ns
ns
t
WHZ
t
CSR
t
CHR
t
ORD
3
5
8
0
10
3
5
10
0
10
ns
ns
ns
ns
t
REF
2,048 Cycles
4,096 Cycles
1
32
64
50
1
32
64
50
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
ns
AC TEST CONDITIONS
Output load:
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V
Two TTL Loads and 50 pF
相关PDF资料
PDF描述
IS41LV44004-60JI x4 EDO Page Mode DRAM
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IS41LV44004-60TI x4 EDO Page Mode DRAM
IS41LV44052-50J x4 Fast Page Mode DRAM
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