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参数资料
| 型号： | IS42LS81600A-10TI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件页数： | 2/66页 |
| 文件大小： | 556K |
| 代理商： | IS42LS81600A-10TI |
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ISSI
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DEVICE OVERVIEW
The 128Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in 2.5V V
DD
and 1.8V V
DDQ
or 3.3V
DD
and 3.3V V
DDQ
memory systems
containing 134,217 ,728 bits. Internally configured as a
quad-bank DRAM with a synchronous interface. Each
16,777,216-bit bank is organized as 4,096 rows by 256
columns by 16 bits.
The 128Mb SDRAM includes an AUTO REFRESH MODE,
and a power-saving, power-down mode. All signals are
registered on the positive edge of the clock signal, CLK. All
inputs and outputs are LVTTL compatible.
Only partials of the memory array can be selected for Self-
Refresh and the refresh period during Self-Refresh is
progammable in 4 steps which drastically reduces the self
refresh current, depending on the case temperature of the
components in the system application.
The 128Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during burst
access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE func-
tion enabled.
Precharge
one bank while accessing one of the
other three banks will hide the
precharge
cycles and provide
seamless, high-speed, random-access operation.
SDRAM
read and write accesses are burst oriented starting at
a selected location and continuing for a programmed num-
ber of locations in a programmed sequence. The registra-
tion of an ACTIVE command begins accesses, followed by
a READ or WRITE command. The ACTIVE command in
conjunction with address bits registered are used to select
the bank and row to be accessed (BA0, BA1 select the
bank; A0-A11 select the row). The READ or WRITE
commands in conjunction with address bits registered are
used to select the starting column location for the burst
access.
Programmable READ or WRITE burst lengths consist of 1,
2, 4 and 8 locations or full page, with a burst terminate
option.
CLK
CKE
CS
RAS
CAS
WE
A11
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
M
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
DATA IN
BUFFER
DATA OUT
BUFFER
DQM
I/O 0-15
Vcc/Vcc
Q
GND/GNDQ
11
11
8
11
11
8
16
16
16
16
256K
(x 16)
4096
4096
4096
4096
R
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROW
ADDRESS
BUFFER
FUNCTIONAL BLOCK DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| IS42LS81600A-7T | RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA |
| IS42LS81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42LS81600A-7T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS81600A-7TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42R16100E-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA |
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