参数资料
型号: IS42LS81600A-7TI
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16Meg × 8,8Meg x16
文件页数: 13/66页
文件大小: 556K
代理商: IS42LS81600A-7TI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
13
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
H
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
RAS
X
H
H
H
H
L
L
L
L
L
X
H
H
H
H
L
L
L
L
X
CAS
X
H
H
L
L
H
H
L
L
L
X
H
H
L
L
H
H
L
L
X
WE
X
H
L
H
L
H
L
H
L
L
X
H
L
H
L
H
L
H
L
X
Address
X
X
X
BA, CA, A10
A, CA, A10
BA, RA
A, A10
X
OC, BA1=L
OC, BA1=H
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
OC, BA
X
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS
EMRS
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
Action
Nop
Nop
Nop
ILLEGAL
(2)
ILLEGAL
(2)
Row activating
Nop
Auto refresh
Mode register set
Extended mode register set
Nop
Nop
Nop
Begin read
(3)
Begin write
(3)
ILLEGAL
(2)
Precharge/Precharge all banks
(
ILLEGAL
ILLEGAL
Continue burst to end to
Row active
Continue burst to end Row
Row active
Burst stop Row active
Terminate burst,
begin new read
(5)
Terminate burst,
begin write
(5, 6)
ILLEGAL
(2)
Terminate burst
Precharging
ILLEGAL
ILLEGAL
Continue burst to end
Write recovering
Continue burst to end
Write recovering
Burst stop Row active
Terminate burst, start read :
Determine AP
(5, 6)
Terminate burst, new write :
Determine AP
(5)
ILLEGAL
(2)
Terminate burst Precharging
(7)
ILLEGAL
ILLEGAL
Idle
Row Active
Read
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
H
H
H
L
BA, RA
BA, A10
ACT
PRE/PALL
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF
MRS/EMRS
DESL
Write
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
L
L
L
L
H
H
L
L
H
L
H
L
BA,
BA, A10
X
OC, BA
RA ACT
PRE/PALL
REF
MRS/EMRS
FUNCTIONAL TRUTH TABLE
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相关PDF资料
PDF描述
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7B 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7BI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相关代理商/技术参数
参数描述
IS42R16100E-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BLI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA
IS42RM16160D-7BL 功能描述:动态随机存取存储器 256M (16Mx16) 143MHz Mobile S动态随机存取存储器, 2.5v RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube
IS42RM16160D-7BLI 功能描述:动态随机存取存储器 256M (16Mx16) 143MHz Mobile S动态随机存取存储器, 2.5v RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube