参数资料
型号: IS61C3216-10K
英文描述: 32K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 32K的× 16 HIGH-SPEED的CMOS静态RAM
文件页数: 7/8页
文件大小: 432K
代理商: IS61C3216-10K
IS61C3216
Integrated Circuit Solution Inc.
7
SR008-0B
1
2
3
4
5
6
7
8
9
10
11
12
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相关PDF资料
PDF描述
IS61C3216-10T 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12K 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12KI 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12T 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12TI 32K x 16 HIGH-SPEED CMOS STATIC RAM
相关代理商/技术参数
参数描述
IS61C3216-10T 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12K 制造商:Integrated Silicon Solution Inc 功能描述:Static RAM, 32Kx16, 44 Pin, Plastic, SOJ 制造商:NA 功能描述:Static RAM, 32Kx16, 44 Pin, Plastic, SOJ
IS61C3216-12KI 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12T 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12TI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM