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参数资料
| 型号： | IS61C3216-12TI |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 16 HIGH-SPEED的CMOS静态RAM |
| 文件页数： | 3/8页 |
| 文件大小： | 432K |
| 代理商： | IS61C3216-12TI |
IS61C3216
Integrated Circuit Solution Inc.
3
SR008-0B
1
2
3
4
5
6
7
8
9
10
11
12
OPERATING RANGE
Range
Ambient Temperature
Speed
V
CC
Commercial
0°C to +70°C
-10, -12
5V ± 5%
-15, -20
5V ± 10%
Industrial
–40°C to +85°C
-12
5V ± 5%
-15, -20
5V ± 10%
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Min. Max. Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
Com.
—
300
—
270
—
250
—
230
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
—
—
—
300
—
270
—
250
I
SB
1
TTL Standby Current
V
CC
= Max.,
Com.
—
40
—
40
—
40
—
40
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
CE
> V
IH
, f = 0
Ind.
—
—
—
45
—
45
—
45
I
SB
2
CMOS Standby
V
CC
= Max.,
CE
> V
CC
– 0.2V,
Com.
—
5
—
5
—
5
—
5
mA
Current (CMOS Inputs)
Ind.
—
—
—
10
—
10
—
10
V
IN
> V
CC
– 0.2V, or
V
IN
<
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.5
0.8
V
I
LI
Input Leakage
GND < V
IN
< V
CC
–2
2
μA
I
LO
Output Leakage
GND < V
OUT
< V
CC
, Outputs Disabled
–2
2
μA
Notes:
1. V
IL
(min.) = –3.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
Value
Unit
V
CC
Supply Voltage with Respect to GND
–0.5 to +7.0
V
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sec-
tions of this specification is not implied.
Exposure to absolute maximum rat-
ing conditions for extended periods
may affect reliability.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C3216-15K | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15KI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15T | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-20K | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C3216-15K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15KI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-15TI-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 512K-Bit 32K x 16 15ns 44-Pin TSOP-II T/R |
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