参数资料
型号: IS61LPD25636A-200B2I
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
中文描述: 256K X 36 CACHE SRAM, 3.1 ns, PBGA119
封装: 14 X 22 MM, 1MM PITCH, PLASTIC, BGA-119
文件页数: 30/32页
文件大小: 311K
代理商: IS61LPD25636A-200B2I
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. B
12/13/06
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is
desired.
165 PBGA PACKAGE PIN CONFIGURATION
512K X 18 (TOP VIEW)
PIN DESCRIPTIONS
12345
6
7
8
9
10
11
A
NC
A
CE
BWb
NC
CE2
BWE
ADSC
ADV
AA
B
NC
A
CE2
NC
BWa
CLK
GW
OE
ADSP
ANC
C
NC
VDDQ
Vss
VDDQ
NC
DQPa
D
NC
DQb
VDDQ
VDD
Vss
VDD
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
Vss
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
Vss
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
VDD
Vss
VDD
VDDQ
NC
DQa
H
NC
Vss
NC
VDD
Vss
VDD
NC
ZZ
J
DQb
NC
VDDQ
VDD
Vss
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
Vss
VDD
VDDQ
DQa
NC
L
DQb
NC
VDDQ
VDD
Vss
VDD
VDDQ
DQa
NC
M
DQb
NC
VDDQ
VDD
Vss
VDD
VDDQ
DQa
NC
N
DQPb
NC
VDDQ
Vss
NC
Vss
VDDQ
NC
P
NC
A
TDI
A1*
TDO
A
R
MODE
NC
A
TMS
A0*
TCK
A
Symbol
Pin Name
A
Address Inputs
A0, A1
Synchronous Burst Address Inputs
ADV
Synchronous Burst Address
Advance
ADSP
Address Status Processor
ADSC
Address Status Controller
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
BWx (x=a,b)
Synchronous Byte Write
Controls
Symbol
Pin Name
BWE
Byte Write Enable
OE
Output Enable
ZZ
Power Sleep Mode
MODE
Burst Sequence Selection
TCK, TDO
JTAG Pins
TMS, TDI
NC
No Connect
DQx
Data Inputs/Outputs
DQPx
Data Inputs/Outputs
VDD
3.3V/2.5V Power Supply
VDDQ
Isolated Output Power Supply
3.3V/2.5V
Vss
Ground
相关PDF资料
PDF描述
IS61LPD25636A-200B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
相关代理商/技术参数
参数描述
IS61LPD25636A-200B3 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200B3I 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ2I 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM