参数资料
型号: IS61LPD25636A-200B3
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
中文描述: 256K X 36 CACHE SRAM, 3.1 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
文件页数: 18/32页
文件大小: 311K
代理商: IS61LPD25636A-200B3
Integrated Silicon Solution, Inc. — 1-800-379-4774
25
Rev. B
12/13/06
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
119 BGA BOUNDARY SCAN ORDER (256K X 36)
Signal Bump
Bit #
Name
ID
Bit #
Name
ID
Bit #
Name
ID
Bit #
Name
ID
1
A
2R
19
DQb
7G
37
BWa
5L
55
DQd
2K
2
A
3T
20
DQb
6F
38
BWb
5G
56
DQd
1L
3
A
4T
21
DQb
7E
39
BWc
3G
57
DQd
2M
4
A
5T
22
DQb
7D
40
BWd
3L
58
DQd
1N
5
A
6R
23
DQb
7H
41
CE2
2B
59
DQd
1P
6
A
3B
24
DQb
6G
42
CE
4E
60
DQd
1K
7
A
5B
25
DQb
6E
43
A
3A
61
DQd
2L
8
DQa
6P
26
DQb
6D
44
A
2A
62
DQd
2N
9
DQa
7N
27
A
6A
45
DQc
2D
63
DQd
2P
10
DQa
6M
28
A
5A
46
DQc
1E
64
MODE
3R
11
DQa
7L
29
ADV
4G
47
DQc
2F
65
A
2C
12
DQa
6K
30
ADSP
4A
48
DQc
1G
66
A
3C
13
DQa
7P
31
ADSC
4B
49
DQc
2H
67
A
5C
14
DQa
6N
32
OE
4F
50
DQc
1D
68
A
6C
15
DQa
6L
33
BWE
4M
51
DQc
2E
69
A1
4N
16
DQa
7K
34
GW
4H
52
DQc
2G
70
A0
4P
17
ZZ
7T
35
CLK
4K
53
DQc
1H
18
DQb
6H
36
A
6B
54
NC
5R
119 BGA BOUNDARY SCAN ORDER (512K X 18)
Signal Bump
Bit #
Name
ID
Bit #
Name
ID
Bit #
Name
ID
Bit #
Name
ID
1
A
2R
14
DQa
7G
27
CLK
4K
40
DQb
2K
2
A
2T
15
DQa
6F
28
A
6B
41
DQb
1L
3
A
3T
16
DQa
7E
29
BWa
5L
42
DQb
2M
4
A
5T
17
DQa
6D
30
BWb
3G
43
DQb
1N
5
A
6R
18
A
6T
31
CE2
2B
44
DQb
2P
6A
3B
19
A
6A
32
CE
4E
45
MODE
3R
7
A
5B
20
A
5A
33
A
3A
46
A
2C
8
DQa
7P
21
ADV
4G
34
A
2A
47
A
3C
9
DQa
6N
22
ADSP
4A
35
DQb
1D
48
A
5C
10
DQa
6L
23
ADSC
4B
36
DQb
2E
49
A
6C
11
DQa
7K
24
OE
4F
37
DQb
2G
50
A1
4N
12
ZZ
7T
25
BWE
4M
38
DQb
1H
51
A0
4P
13
DQa
6H
26
GW
4H
39
NC
5R
相关PDF资料
PDF描述
IS61LPD25636A-200B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-250B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
相关代理商/技术参数
参数描述
IS61LPD25636A-200B3I 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQ2I 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQLI 功能描述:静态随机存取存储器 8M (256Kx36) 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray