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参数资料
| 型号： | IS61LPS12832A-250TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 128K X 32 CACHE SRAM, 2.6 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 5/26页 |
| 文件大小： | 310K |
| 代理商： | IS61LPS12832A-250TQ |
Integrated Silicon Solution, Inc.
13
Rev. G
05/06/09
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-250
-200
MAX
Symbol Parameter
Test Conditions
Temp.range
x18
x32/x36
x18
x32/x36
Unit
ICC
AC Operating
Device Selected,
Com.
225
200
mA
Supply Current
OE = VIH, ZZ
≤ VIL,
Ind.
250
210
All Inputs
≤ 0.2V or
Auto.
275
225
≥ VDD – 0.2V,
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
Com.
90
mA
TTL Input
VDD = Max.,
Ind.
100
All Inputs
≤ VIL or ≥ VIH,
Auto.
120
ZZ
≤ VIL, f = Max.
ISBI
Standby Current
Device Deselected,
Com.
70
mA
CMOS Input
VDD = Max.,
Ind.
75
VIN
≤ VSS + 0.2V or
Auto.
90
≥VDD – 0.2V
typ.(2)
40
f = 0
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100A maximum leakage current when tied to
≤
VSS + 0.2V or
≥ VDD – 0.2V.
2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPS12832A-250TQI | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-200B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-200B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS25672A | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPS12832A-250TQI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-200B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12836A-200B2I | 功能描述:静态随机存取存储器 4M (128Kx36) 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPS12836A-200B2I-TR | 功能描述:静态随机存取存储器 4M (128Kx36) 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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