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参数资料
| 型号： | IS61LV6424 |
| 英文描述： | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 64K的× 24 HIGH-SPEED的CMOS静态RAM为3.3V电源 |
| 文件页数： | 9/10页 |
| 文件大小： | 138K |
| 代理商： | IS61LV6424 |
IS61LV6424
Integrated Circuit Solution Inc.
AHSR012-0D
S2-103
1
2
3
4
5
6
7
8
9
10
11
12
WRITE CYCLE NO. 3
(1)
(
WE
Controlled:
OE
I
S
LOW
DURING
W
RITE
C
YLE
)
Note:
1. The internal Write time is defined by the overlap of
CE1
= LOW, CE2 = HIGH and
WE
= LOW. All signals must be in valid
states to initiate a Write, but any can be deasserted to terminate the Write. The Data Input Setup and Hold timing is
referenced to the rising or falling edge of the signal that terminates the Write.
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE1
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
HIGH
CE2
t
VW
V/S
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LV6424-10 | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-10TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-12TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-15TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-9TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LV6424-10 | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-10TQ | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-10TQI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x24 SRAM |
| IS61LV6424-12TQ | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-15TQ | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
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