- 您现在的位置：买卖IC网 > PDF目录176102 > IS61NVP12836B-200TQ (INTEGRATED SILICON SOLUTION INC) 128K X 36 ZBT SRAM, 3.1 ns, PQFP100 PDF资料下载
参数资料
| 型号： | IS61NVP12836B-200TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 ZBT SRAM, 3.1 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 1/29页 |
| 文件大小： | 504K |
| 代理商： | IS61NVP12836B-200TQ |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. D
09/10/07
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
FEATURES
100percentbusutilization
NowaitcyclesbetweenReadandWrite
Internalself-timedwritecycle
IndividualByteWriteControl
SingleR/W(Read/Write)controlpin
Clockcontrolled,registeredaddress,
data and control
Interleavedorlinearburstsequencecontrolus-
ing MODE input
Threechipenablesforsimpledepthexpansion
and address pipelining
PowerDownmode
Commondatainputsanddataoutputs
CKE pin to enable clock and suspend operation
JEDEC100-pinTQFP,165-ballPBGAand119-
ballPBGApackages
Powersupply:
NVP:Vdd 2.5V(±5%),Vddq2.5V(±5%)
NLP:Vdd3.3V(±5%),Vddq3.3V/2.5V(±5%)
Industrialtemperatureavailable
Lead-freeavailable
DESCRIPTION
The4Meg'NLP/NVP'productfamilyfeaturehigh-speed,
low-powersynchronousstaticRAMsdesignedtoprovide
aburstable,high-performance,'nowait'state,devicefor
networking and communications applications.They are
organizedas128Kwordsby32bits,128Kwordsby36
bits,and256Kwordsby18bits,fabricatedwith
ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
writetoread.Thisdeviceintegratesa2-bitburstcounter,
high-speedSRAMcore,andhigh-drivecapabilityoutputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
byapositive-edge-triggeredsingleclockinput.Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKEisHIGH.Inthisstatetheinternal
device will hold their previous values.
AllRead,WriteandDeselectcyclesareinitiatedbytheADV
input.WhentheADVisHIGHtheinternalburstcounter
isincremented.Newexternaladdressescanbeloaded
whenADVisLOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when WE is
LOW.Separatebyteenablesallowindividualbytestobe
written.
Aburstmodepin(MODE)definestheorderoftheburst
sequence.WhentiedHIGH,theinterleavedburstsequence
isselected.WhentiedLOW,thelinearburstsequenceis
selected.
128K x 32, 128K x 36, and 256K x 18
4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
SEPTEMBER 2007
FAST ACCESS TIME
Symbol
Parameter
-250
-200
Units
tkq
ClockAccessTime
2.6
3.1
ns
tkc
CycleTime
4
5
ns
Frequency
250
200
MHz
相关PDF资料 |
PDF描述 |
|---|---|
| IS61SP25618-133B | 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM |
| IS61SP25618-133TQ | Octal Transparent D-Type Latches With 3-State Outputs 20-SSOP -40 to 85 |
| IS61SP25618-133TQI | Octal Transparent D-Type Latches With 3-State Outputs 20-SSOP -40 to 85 |
| IS61SP25618-150B | Octal Transparent D-Type Latches With 3-State Outputs 20-SSOP -40 to 85 |
| IS61SP25618-150TQ | Octal Transparent D-Type Latches With 3-State Outputs 20-SOIC -40 to 85 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61NVP204818A-166TQLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B2LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B3LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200TQI | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NVP25636A-200TQI-TR | 功能描述:静态随机存取存储器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。