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参数资料
| 型号： | IS61SF6432-10TQ |
| 英文描述： | 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 64K的× 32 SYNCHRONOU仛流，通过静态内存 |
| 文件页数： | 5/16页 |
| 文件大小： | 480K |
| 代理商： | IS61SF6432-10TQ |
IS61SF6432
Integrated Circuit Solution Inc.
5
SSR004-0B
INTERLEAVED BURST ADDRESS TABLE (MODE = V
CCQ
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND
Q
)
0,0
1,0
0,1
A1
’
, A0
’
= 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–55 to +150
°C
P
D
Power Dissipation
1.8
W
I
OUT
Output Current (per I/O)
100
mA
V
IN
, V
OUT
Voltage Relative to GND for I/O Pins
–0.5 to V
CCQ
+ 0.3
V
V
IN
Voltage Relative to GND for
–0.5 to 5.5
V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
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