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参数资料
| 型号： | IS61SF6432-10TQI |
| 英文描述： | Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 |
| 中文描述： | 64K的× 32 SYNCHRONOU仛流，通过静态内存 |
| 文件页数： | 6/16页 |
| 文件大小： | 480K |
| 代理商： | IS61SF6432-10TQI |
IS61SF6432
6
Integrated Circuit Solution Inc.
SSR004-0B
OPERATING RANGE
Range
Ambient Temperature
V
CC
Commercial
0°C to +70°C
3.3V +10%, –5%
Industrial
–40°C to +85°C
3.3V +10%, –5%
DC ELECTRICAL CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= –5.0 mA
2.4
—
V
V
OL
Output LOW Voltage
I
OL
= 5.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CCQ
+ 0.3
V
V
IL
Input LOW Voltage
–0.3
0.8
V
I
LI
Input Leakage Current
GND
≤
V
IN
≤
V
CCQ
(2)
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage Current
GND
≤
V
OUT
≤
V
CCQ
,
OE
= V
IH
Com.
–5
5
μA
Ind.
–10
10
POWER SUPPLY CHARACTERISTICS
(Over Operating Range)
-9
-10
Symbol Parameter
Test Conditions
Min. Typ. Max.
Min. Typ. Max.
Unit
I
CC
AC Operating
Device Selected,
Com.
—
300
—
—
290
—
mA
Supply Current
All Inputs = V
IL
or V
IH
OE
= V
IH
, Cycle Time
≥
t
KC
min.
Ind.
—
—
—
—
300
—
I
SB
Standby Current
Device Deselected,
Com.
—
60
—
—
60
—
mA
V
CC
= Max.,
Ind.
—
—
—
—
70
—
All Inputs = V
IH
or V
IL
CLK Cycle Time
≥
t
KC
min.
I
ZZ
Power-Down Mode
ZZ = V
CCQ
,
Com.
—
10
—
—
10
—
CLK Running
All Inputs
≤
GND + 0.2V
or
≥
V
CC
– 0.2V
Ind.
—
—
—
—
20
—
mA
Current
Note:
1. MODE pin has an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect, tied to GND, or tied to
V
CCQ
.
2. MODE pin should be tied to Vcc or GND. They exhibit ±30 μA maximum leakage current when tied to
≤
GND + 0.2V or
≥
Vcc – 0.2V.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61SF6432-9PQ | Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 |
| IS61SF6432-9TQ | 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS621220 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C) |
| IS621230 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C) |
| IS621240 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 800A I(C) |
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