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参数资料
| 型号： | IS62LV256-45TI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 45 ns, PDSO28 |
| 封装： | TSOP1-28 |
| 文件页数： | 4/9页 |
| 文件大小： | 40K |
| 代理商： | IS62LV256-45TI |
IS62LV256
ISSI
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. K
12/11/02
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc =3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
-70 ns
Min.
Symbol
Parameter
Test Conditions
Min.
Max.
Max.
Unit
I
CC
1
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Com.
Ind.
—
—
20
30
—
—
20
30
mA
I
CC
2
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
35
45
—
—
30
40
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
2
5
—
—
2
5
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
90
200
—
—
90
200
μA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相关PDF资料 |
PDF描述 |
|---|---|
| IS62LV256-45U | 32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-45UI | 32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70RT | 32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70RTI | 32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70T | 32K x 8 LOW VOLTAGE STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62LV256-45U | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62LV256-45UI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS62LV256-70JI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS62LV256-70N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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