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参数资料
| 型号： | IS62LV256-70JI |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件页数： | 1/10页 |
| 文件大小： | 91K |
| 代理商： | IS62LV256-70JI |
IS62LV25616LL
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
05/04/01
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 70 and 85 ns
CMOS low power operation
– 135 mW (typical) operating
– 16.5 W (typical) CMOS standby
TTL compatible interface levels
Single 2.7V (min) to 3.15V (max) VCC power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (8mm x 10mm and 7.2mm x 8.7mm)
DESCRIPTION
The
ISSI IS62LV25616LL is high-speed, 4,194,304 bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CEisHIGH(deselected)orwhenCEislowandbothLBand
UB are HIGH, the device assumes a standby mode at which the
power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CEand OE.TheactiveLOWWriteEnable
(
WE)controlsbothwritingandreadingofthememory.Adatabyte
allows Upper Byte (
UB) and Lower Byte (LB) access.
The IS62LV25616LL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm
and 7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
MAY 2001
A0-A17
CE
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
相关PDF资料 |
PDF描述 |
|---|---|
| IS62LV256-70N | x8 SRAM |
| IS62LV256-70NI | x8 SRAM |
| IS62LV5128L-10B | x8 SRAM |
| IS62LV5128L-10BI | x8 SRAM |
| IS62LV5128L-70B | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62LV256-70N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS62LV256-70NI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS62LV256-70RT | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70RTI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE STATIC RAM |
| IS62LV256-70T | 功能描述:静态随机存取存储器 256K 32Kx8 70ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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