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参数资料
| 型号： | IS82C82 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 通用总线功能 |
| 英文描述： | CMOS Octal Latching Bus Driver |
| 中文描述： | CMOS SERIES, 8-BIT DRIVER, TRUE OUTPUT, PQCC20 |
| 文件页数： | 4/7页 |
| 文件大小： | 103K |
| 代理商： | IS82C82 |
4-277
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.5V to V
CC
+0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C82. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to +70
o
C
I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
M82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Thermal Resistance (Typical)
CERDIP. . . . . . . . . . . . . . . . . . . . . . . .
CLCC. . . . . . . . . . . . . . . . . . . . . . . . . .
PDIP . . . . . . . . . . . . . . . . . . . . . . . . . .
PLCC. . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range. . . . . . . . . . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150
o
C
Minimum Lead Temperature (Soldering 10s) . . . . . . . . . . . .+300
o
C
(PLCC Lead Tips Only)
θ
JA
θ
JC
75
o
C/W
85
o
C/W
75
75
18
o
C/W
22
o
C/W
N/A
N/A
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5.0V
±
10%;
T
A
= 0
o
C to +70
o
C (C82C82);
T
A
= -40
o
C to +85
o
C (I82C82);
T
A
= -55
o
C to +125
o
C (M82C82)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V
IH
Logical One Input Voltage
2.0
-
V
C82C82, I82C82 (Note 1)
2.2
-
V
M82C82 (Note 1)
V
IL
Logical Zero Input Voltage
-
0.8
V
V
OH
Logical One Output Voltage
2.9
-
V
I
OH
= -8mA, OE = GND
V
CC
-0.4V
-
V
I
OH
= -100
μ
A, OE = GND
V
OL
Logical Zero Output Voltage
-
0.4
V
I
OL
= 8mA, OE = GND
II
Input Leakage Current
-1.0
1.0
μ
A
V
IN
= GND or V
CC
, DIP Pins 1-9, 11
IO
Output Leakage Current
-10.0
10.0
μ
A
V
O
= GND or V
CC
, OE
≥
V
CC
-0.5V
DIP Pins 12-19
ICCSB
Standby Power Supply Cur-
rent
-
10
μ
A
V
IN
= V
CC
or GND, V
CC
= 5.5V, Outputs Open
ICCOP
Operating Power Supply
Current
-
1
mA/MHz
T
A
= +25
o
C, V
CC
= 5V, Typical (See Note 2)
NOTES:
1. V
IH
is measured by applying a pulse of magnitude = V
IH
min to one data input at a time and checking the corresponding device output
for a valid logical “1” during valid input high time. Control pins (STB, OE) are tested separately with all device data input pins at V
CC
-0.4.
2. Typical ICCOP = 1mA/MHz of STB cycle time. (Example: 5MHz
μ
P, ALE = 1.25MHz, ICCOP = 1.25mA).
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
C
IN
Input Capacitance
13
pF
Freq = 1MHz, all measurements are
referenced to device GND
C
OUT
Output Capacitance
20
pF
82C82
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