Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Notes
I
IL
Low Level Input Current
V
I
=V
ss
+/-10
uA
2
I
IH
High Level Input Current
V
I
= V
dd
+/-10
uA
2
I
OZ
Tri-State Output Leakage
V
O
= 0V or V
dd
+/-10
uA
2
C
IN
Input Capacitance
Freq=1MHz
2.0
4.0
pF
3,4
C
O
Output Capacitance
Freq=1MHz
4.0
pF
3,4
C
IO
Bidi, I/O Capacitance
Freq=1MHz
0.9
1.1
Volts
3,4
I
KLU
I/O Latch Up Current
V<V
SS
, V>V
DD
200
500
mA
V
ESD
Electrostatic Protection
HBM
2000
4000
V
5
Note 1
. These are extended voltage and temperature specifications
V
from 2.7 V to 3.6 V
Temperature Ambient from -55 to 125 degrees Centigrade
Note 2
. Adherence to rules in Power Pin / Pad Specifications Required
Note 3
. Excluding Package
Note 4
. At 0.0 Volts
Note 5
. Human Body Model
Table 11. General Interface DC Electrical Characteristics (Note 1)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no
responsability for the consequences of use of such information nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights
of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice.
This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without the express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All rights reserved.
Purchase of I
2
C Components by SGS-THOMSON Microelectronics conveys a license under the Philips I
2
C Patent.
Rights to use these components in an I
2
C system is granted provided that the system conforms to the I
2
C Standard
Specification as defined by Philips.
SGS-THOMSON Microelectronics Group of Companies
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ISB35000 SERIES
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