参数资料
型号: ISB35389
厂商: 意法半导体
英文描述: HCMOS STRUCTURED ARRAY
中文描述: HCMOS结构化阵列
文件页数: 14/15页
文件大小: 345K
代理商: ISB35389
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Notes
V
IL
Low Level Input Voltage
0.8
Volts
2,3
V
IH
High Level Input Voltage
2.0
Volts
2,3
V
OL
Low Level Output Voltage
I
OL
= Rated Buffer
Current
0.2
0.4
Volts
2,3,4
V
OH
High Level Output Voltage
I
OH
= Rated Buffer
Current
2.4
3.0
Volts
2,3,4
V
t +
Schmitt Trigger +Ve
Threshold
1.7
1.9
Volts
2,3
V
t -
Schmitt Trigger -Ve
Threshold
0.9
1.1
Volts
2,3
Note 1
. These are normal Voltage and extended temperature specifications V
DD
from 3.0 V to 3.6 V
Temperature Ambient from -55 to 125 degrees Centigrade
Note 2
. Adherence to rules in Power Pin / Pad Specifications Required
Note 3
. Refer to the ISB35000 Gate Array Specification for full Testing Levels and Conditions
Note 4
. Buffers offered in 2, 4, 8, 12, 16, and 24 mA TTL options
Table 9. LVTTL Interface DC Electrical Characteristics (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Notes
V
IL
Low Level Input Voltage
0.2xV
DD
Volts
2,3,4
V
IH
High Level Input Voltage
0.8xV
DD
Volts
2,3,4
V
OL
Low Level Output Voltage
I
OL
= Rated Buffer
Current
0.2
0.4
Volts
2,3,4,5,6
V
OH
High Level Output Voltage
I
OH
= Rated Buffer
Current
0.85
x
V
DD
0.9
x
V
DD
Volts
2,3,4,5,6
V
t +
Schmitt Trigger +Ve
Threshold
1.7
1.9
Volts
2,3
V
t -
Schmitt Trigger -Ve
Threshold
0.9
1.1
Volts
2,3
Note 1
. These are extended voltage and temperature specifications
V
from 2.7 V to 3.6 V
Temperature Ambient from -55 to 125 degrees Centigrade
Note 2
. Adherence to rules in Power Pin / Pad Specifications Required
Note 3
. Refer to the ISB35000 Gate Array Specification for full Testing Levels and Conditions
Note 4
. Buffers offered in 2, 4, and 8 mA CMOS options
Note 5
. Note only one CMOS buffer may sink or source DC current when parametric measurements are taken due to the reason that the power
supply specifications for CMOS product are not written to support DC current. If more than one buffer is active voltage drops in the
supply may cause false failure readings.
Note 6
. If no buffers are sinking or sourcing current and all internal pull up or pull down resistors in bidi buffers have been disabled by having
the T2 Test Pin positive V
OL
(max) = 0.05 Volts and V
OH
(min)=V
DD
-0.05 Volts
Table 10. LVCMOS Interface DC Electrical Characteristics (Note 1)
ISB35000 SERIES
14/15
相关PDF资料
PDF描述
ISB35484 HCMOS STRUCTURED ARRAY
ISB35666 HCMOS STRUCTURED ARRAY
ISB35832 HCMOS STRUCTURED ARRAY
ISC-1008 Surface Mount Wirewound Shielded Inductor
ISC-1008ER100M Surface Mount Wirewound Shielded Inductor
相关代理商/技术参数
参数描述
ISB35484 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HCMOS STRUCTURED ARRAY
ISB35666 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HCMOS STRUCTURED ARRAY
ISB35832 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HCMOS STRUCTURED ARRAY
ISB40 制造商:ISOCOM 制造商全称:ISOCOM 功能描述:Telecommunications
ISB-440 制造商:STANDARD INSERTS 功能描述: