参数资料
| 型号： | ISL12022IBZ-T |
| 厂商： | Intersil |
| 文件页数： | 24/29页 |
| 文件大小： | 0K |
| 描述： | IC RTC/CALENDAR TEMP SNSR 8-SOIC |
| 应用说明： | Addressing Power Issues in Real Time Clock Appls |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 2,500 |
| 类型： | 时钟/日历 |
| 特点： | 警报器，夏令时，闰年，SRAM |
| 存储容量： | 128B |
| 时间格式： | HH:MM:SS（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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ISL12022
4
FN6659.3
November 22, 2011
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT and IRQ/FOUT pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V
Voltage on X1 and X2 pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.5V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3014) . . . . . . . . . . >3kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300V
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
8 Ld SOIC (Note 4, 5) . . . . . . . . . . . . . . . . . .
102
46
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTE:
4.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. For
θJC, the “case temp” location is taken at the package top center.
DC Operating Characteristics - RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated.
Boldface limits apply over the operating temperature range, -40°C to +85°C
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 13)
TYP
(Note 9)
MAX
(Note 13) UNITS NOTES
VDD
Main Power Supply
(Note 15)
2.7
5.5
V
VBAT
Battery Supply Voltage
(Note 15)
1.8
5.5
IDD1
Supply Current. (I2C not Active, Temperature
Conversion not Active, FOUT not Active)
VDD = 5V
4.1
15
A
VDD = 3V
3.5
14
A
IDD2
Supply Current. (I2C Active, Temperature
Conversion not Active, FOUT not Active)
VDD = 5V
200
500
A
IDD3
Supply Current. (I2C not Active, Temperature
Conversion Active, FOUT not Active)
VDD = 5V
120
400
A
IBAT
Battery Supply Current
VDD = 0V, VBAT = 3V, TA = +25°C
1.0
1.6
A
VDD = 0V, VBAT = 3V
1.0
5.0
A
IBATLKG Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
VIL = 0V, VIH = 5.5V
-1.0
±0.1
1.0
A
ILO
I/O Leakage Current on SDA
VIL = 0V, VIH = 5.5V
-1.0
±0.1
1.0
A
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brownout Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
(Note 15)
2.0
2.2
2.4
V
VTRIPHYS VTRIP Hysteresis
30
mV
VBATHYS VBAT Hysteresis
50
mV
ΔFoutT
Oscillator Stability vs Temperature
VDD = 3.3V
-5
+5
ppm
ΔFoutV
Oscillator Stability vs Voltage
2.7V
≤ VDD ≤ 5.5V
-3
+3
ppm
ΔATLSB AT Sensitivity per LSB
BETA (4:0) = 10000
0.5
1
2
ppm
Temp
Temperature Sensor Accuracy
VDD = VBAT = 3.3V
±2
°C
IRQ/FOUT (OPEN DRAIN OUTPUT)
VOL
Output Low Voltage
VDD = 5.5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
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| ISL12022IBZ-T7A | 功能描述:实时时钟 REAL TIME CLK/CLNDR W/TEMP COMP 8 L RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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