参数资料
| 型号： | ISL12022IBZ |
| 厂商： | Intersil |
| 文件页数： | 26/29页 |
| 文件大小： | 0K |
| 描述： | IC RTC/CALENDAR TEMP SNSR 8-SOIC |
| 应用说明： | Addressing Power Issues in Real Time Clock Appls |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 98 |
| 类型： | 时钟/日历 |
| 特点： | 警报器，夏令时，闰年，SRAM |
| 存储容量： | 128B |
| 时间格式： | HH:MM:SS（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1245 (CN2011-ZH PDF) |
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ISL12022
6
FN6659.3
November 22, 2011
tR
SDA and SCL Rise Time
From 30% to 70% of VDD.
20 + 0.1 x Cb
300
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VDD.
20 + 0.1 x Cb
300
ns
Cb
Capacitive Loading of SDA or SCL
Total on-chip and off-chip
10
400
pF
RPU
SDA and SCL Bus Pull-up Resistor
Off-chip
Maximum is determined by tR
and tF.
For Cb = 400pF, max is about
2k~2.5k.
For Cb = 40pF, max is about
15k~20k
1
k
NOTES:
6. Temperature Conversion is inactive below VBAT = 2.7V. Device operation is not guaranteed at VBAT <1.8V.
7. IRQ/FOUT inactive.
8. VDD > VBAT +VBATHYS.
9. Specified at +25°C.
10. In order to ensure proper timekeeping, the VDD SR- specification must be followed.
11. Limits should be considered typical and are not production tested.
12. These are I2C specific parameters and are not tested, however, they are used to set conditions for testing devices to validate specification.
13. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
14. Specifications are typical and require using a recommended crystal (see “Application Section” on page 25).
15. Minimum VDD and/or VBAT of 1V to sustain the SRAM. The value is based on characterization and it is not tested.
16. To avoid EEPROM recall issues, it is advised to use this minimum power up slew rate. Not tested, shown as typical only.
I2C Interface Specifications Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise specified.
Boldface limits apply over the operating temperature range, -40°C to +85°C (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 13)
TYP
(Note 9)
MAX
(Note 13)
UNITS
NOTES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL12022IBZ-T | 功能描述:实时时钟 REAL TIME CLK/CLNDR W/TEMP COMP 8 L RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| ISL12022IBZ-T7A | 功能描述:实时时钟 REAL TIME CLK/CLNDR W/TEMP COMP 8 L RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| ISL12022M | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation, and Auto Daylight Saving |
| ISL12022M_09 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation, and Auto Daylight Saving |
| ISL12022M_10 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM,Integrated ±5ppm Temperature Compensation and Auto Daylight Saving |
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