参数资料
型号: ISL2101AABZ
厂商: Intersil
文件页数: 6/11页
文件大小: 0K
描述: IC DVR HALF-BRDGE HI FREQ 8SOIC
标准包装: 980
配置: 半桥
输入类型: 非反相
延迟时间: 39ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 114V
电源电压: 9 V ~ 14 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
ISL2100A, ISL2101A
Pin Descriptions
SYMBOL
V DD
HB
HO
HS
HI
LI
V SS
LO
EPAD
DESCRIPTION
Positive supply to lower gate driver. Bypass this pin to V SS .
High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
High-side output. Connect to gate of high-side power MOSFET.
High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this
pin.
High-side input.
Low-side input.
Chip negative supply, which will generally be ground.
Low-side output. Connect to gate of low-side power MOSFET.
Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
Timing Diagrams
LI
HI ,
LI
HI
t HPLH ,
t LPLH
t HPHL ,
t LPHL
LO
HO ,
t MON
t MOFF
LO
FIGURE 3. PROPAGATION DELAYS
Typical Performance Curves
10
10
HO
FIGURE 4. DELAY MATCHING
T = +150°C
1
T = -40°C
T = +125°C
T = +150°C
1
T = -40°C
T = +25°C
T = +125°C
T = +25°C
0.1
10
100
1 . 10
3
0.1
10
100
1 . 10
3
FREQUENCY (kHz)
FIGURE 5. ISL2100A IDD OPERATING CURRENT vs
FREQUENCY
6
FREQUENCY (kHz)
FIGURE 6. ISL2101A IDD OPERATING CURRENT vs
FREQUENCY
FN6294.3
May 6, 2010
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