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参数资料
| 型号： | ISL2101AAR3Z-T |
| 厂商： | Intersil |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF-BRDG HF 100V 2A 9DFN |
| 标准包装： | 6,000 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 39ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 114V |
| 电源电压： | 9 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 9-VFDFN 裸露焊盘 |
| 供应商设备封装： | 9-DFN-EP（3x3） |
| 包装： | 带卷 (TR) |
ISL2100A, ISL2101A
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V DD, V HB - V HS (Notes 1, 2) . . . . . . . -0.3V to 18V
Thermal Resistance (Typical)
θ JA (°C/W)
θ JC (°C/W)
LI and HI Voltages (Note 2) . . . . . . . . . . . . . . . -0.3V to V DD + 0.3V
Voltage on LO (Note 2) . . . . . . . . . . . . . . . . . . -0.3V to V DD + 0.3V
Voltage on HO (Note 2) . . . . . . . . . . . . . . V HS - 0.3V to V HB + 0.3V
Voltage on HS (Continuous) (Note 2) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V
Average Current in V DD to HB Diode . . . . . . . . . . . . . . . . . . 100mA
DFN (Notes 3, 4) . . . . . . . . . . . . . . . . . 47 3.5
SOIC (Note 3) . . . . . . . . . . . . . . . . . . . 120 N/A
Max Power Dissipation at +25°C in Free Air (DFN, Note 3) . . . 2.27W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
For Recommended soldering conditions see Tech Brief TB389.
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . V HS + 8V to V HS + 14V and V DD - 1V to V DD + 100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. The ISL2100A-ISL2101A are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating
curve for this mode of operation.
2. All voltages referenced to V SS unless otherwise specified.
3. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
4. For θ JC, the “case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379 for details.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified. Parameters with MIN
and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.
T J = -40°C to
T J = +25°C
+125°C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Quiescent Current
V DD Operating Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DD
I DDO
I DDO
I HB
I HBO
I HBS
I HBSO
ISL2100A; LI = HI = 0V
ISL2101A; LI = HI = 0V
ISL2100A; f = 500kHz
ISL2101A; f = 500kHz
LI = HI = 0V
f = 500kHz
LI = HI = 0V; V HB = V HS = 114V
f = 500kHz; V HB = V HS = 114V
-
-
-
-
-
-
-
-
0.1
0.3
1.6
1.9
0.1
2.0
0.05
0.9
0.25
0.45
2.2
2.5
0.15
2.5
1
-
-
-
-
-
-
-
-
-
0.3
0.55
2.7
3
0.2
3
10
-
mA
mA
mA
mA
mA
mA
μA
mA
INPUT PINS
Low Level Input Voltage Threshold
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pull-down Resistance
V IL
V IL
V IH
V IH
V IHYS
R I
ISL2100A
ISL2101A
ISL2100A
ISL2101A
ISL2100A
3.7
1.4
-
-
-
-
4.4
1.8
6.6
1.8
2.2
210
-
-
7.4
2.2
-
-
2.7
1.2
-
-
-
100
-
-
8.4
2.4
-
500
V
V
V
V
V
k Ω
UNDERVOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
V DDR
V DDH
V HBR
6.8
-
6.2
7.3
0.6
6.9
7.8
-
7.5
6.5
-
5.9
8.1
-
7.8
V
V
V
4
FN6294.3
May 6, 2010
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