参数资料
型号: ISL2111ARTZ-T
厂商: Intersil
文件页数: 6/13页
文件大小: 0K
描述: IC MSFT DVR HALF-BRG 100V 10TDFN
标准包装: 1
配置: 半桥
输入类型: 非反相
延迟时间: 38ns
电流 - 峰: 3A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 100V
电源电压: 8 V ~ 14 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-WFDFN 裸露焊盘
供应商设备封装: 10-TDFN(4x4)
包装: 标准包装
其它名称: ISL2111ARTZ-TDKR
ISL2110, ISL2111
Pin Descriptions
SYMBOL
V DD
HB
HO
HS
HI
LI
V SS
LO
NC
EPAD
DESCRIPTION
Positive supply to lower gate driver. Bypass this pin to V SS .
High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
High-side output. Connect to gate of high-side power MOSFET.
High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this
pin.
High-side input.
Low-side input.
Chip negative supply, which will generally be ground.
Low-side output. Connect to gate of low-side power MOSFET.
No Connect.
Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
Timing Diagrams
LI
HI , LI
HI
t HPLH ,
t LPLH
t HPHL ,
t LPHL
LO
HO , LO
HO
t MON
t MOFF
FIGURE 3. PROPAGATION DELAYS
Typical Performance Curves
10.0
10.0
FIGURE 4. DELAY MATCHING
T = -40°C
T = -40°C
T = +25°C
1.0
T = +25°C
T = +125°C
1.0
T = +150°C
T = +125°C
0.1
10k
T = +150°C
100k
1 . 10 3 k
0.1
10k
100k
1 . 10 3 k
FREQUENCY (Hz)
FIGURE 5. ISL2110 I DD OPERATING CURRENT vs
FREQUENCY
6
FREQUENCY (Hz)
FIGURE 6. ISL2111 I DD OPERATING CURRENT vs
FREQUENCY
FN6295.6
March 8, 2012
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