参数资料
型号: ISL22317WFRTZ-TK
厂商: Intersil
文件页数: 10/15页
文件大小: 0K
描述: IC POT DGTL 128TP LN LP 10-TDFN
产品培训模块: Solutions for Industrial Control Applications
标准包装: 1,000
系列: XDCP™
接片: 128
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 ±10 ppm/°C
存储器类型: 非易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-WFDFN 裸露焊盘
供应商设备封装: 10-TDFN-EP(3x3)
包装: 带卷 (TR)
4
FN6912.1
April 15, 2010
ZSerror
(Note 9)
Zero-scale Error
W, U or T option
VRL < VRW < VRL + 0.3V
0.5
2
LSB
(Note 8)
FSerror
(Note 10)
Full-scale Error
W, U or T option
VCC - 0.3V < VRW < VCC
-2
-0.5
LSB
(Note 8)
TCV
(Notes 13, 19)
Ratiometric Temperature Coefficient
Match to external Rref, DCP register set
between 15 hex and 7F hex
TCref
±10
ppm/°C
fcutoff
(Note 19)
-3dB Cut Off Frequency
Wiper at midpoint (40hex) W option (10k)
1
kHz
Wiper at midpoint (40hex) U option (50k)
1
kHz
Wiper at midpoint (40hex) T option (100k)
1
kHz
RESISTOR MODE (Measurements between RW and RL with RH not connected)
RINL
(Note 17)
Integral Non-linearity
W, U or T option
Current forced to the wiper
IW = (VCC - VRL)/RTOTAL (Note 20)
-3
±1
3
MI
(Note 14)
RDNL
(Note 16)
Differential Non-linearity
W, U or T option
Current forced to the wiper
IW = (VCC - VRL)/RTOTAL (Note 20)
-3
±1
3
MI
(Note 14)
Roffset
(Note 15)
Offset
W, U or T option, wiper is out of
recommended operation conditions
012
MI
(Note 14)
TCR
(Notes 18, 19)
Resistance Temperature Coefficient
Match to external Rref, DCP register set
between 15 hex and 7F hex, all options
TCref
±10
ppm/°C
Analog Specifications
Over recommended operating conditions unless otherwise stated. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 22)
TYP
(Note 7)
MAX
(Note 22)
UNIT
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 22)
TYP
(Note 7)
MAX
(Note 22)
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +5.5V, fSCL = 400kHz; SDA = Open;
(for I2C, active, read and write states)
0.6
1.2
mA
VCC = +2.7V, fSCL = 400kHz; SDA = Open;
(for I2C, active, read and write states), 10k
0.35
0.9
mA
ICC2
VCC Supply Current (non-volatile
write/read)
VCC = +5.5V, fSCL = 400kHz; SDA = Open;
(for I2C, active, read and write states)
1.75
2.5
mA
VCC = +2.7V, fSCL = 400kHz; SDA = Open;
(for I2C, active, read and write states)
1.0
1.8
mA
ISB
VCC Current (Standby)
VCC = +5.5V @ +125°C, I2C interface in
standby state
0.5
1.0
mA
VCC = +2.7V @ +125°C, I2C interface in
standby state, 10k
0.3
0.75
mA
ISD
VCC Current (Shutdown)
VCC = +5.5V @ +125°C, I2C interface in
standby state
0.5
1.5
A
ILkgDig
Leakage Current, at Pins REF_A,
REF_B, A1, SDA, and SCL
Voltage at pin from GND to VCC
-0.25
0.25
A
tDCP
(Note 19)
DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
to wiper new position
150
s
tShdnRec
(Note 19)
DCP Recall Time from Shutdown
Mode
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
150
s
Vpor
Power-on Recall Voltage
Minimum VCC at which memory recall occurs
2.6
V
VCC Ramp VCC Ramp Rate
0.2
50
V/ms
ISL22317
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