参数资料
| 型号： | ISL22319WFU8Z-TK |
| 厂商： | Intersil |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC POT DGTL 128TP LN LP 8-MSOP |
| 标准包装： | 1,000 |
| 系列： | XDCP™ |
| 接片： | 128 |
| 电阻（欧姆）： | 10k |
| 电路数： | 1 |
| 温度系数： | 标准值 ±50 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | I²C（设备位址） |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
4
FN6310.1
September 9, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 14)
TYP
(Note 3)
MAX
(Note 14)
UNIT
ICC1
VCC Supply Current (volatile
write/read)
10k DCP, fSCL = 400kHz; (for I
2C active,
read and write states)
1mA
VCC Supply Current (volatile
write/read, non-volatile read)
50k DCP, fSCL = 400kHz; (for I
2C active,
read and write states)
0.5
mA
ICC2
VCC Supply Current (non-volatile
write/read)
10k DCP, fSCL = 400kHz; (for I
2C active,
read and write states)
3.2
mA
VCC Supply Current (non-volatile
write/read)
50k DCP, fSCL = 400kHz; (for I
2C active,
read and write states)
2.7
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, I
2C interface in
standby state
850
A
VCC = +3.6V, 10k DCP, I
2C interface in
standby state
550
A
VCC = +5.5V, 50k DCP, I
2C interface in
standby state
160
A
VCC = +3.6V, 50k DCP, I
2C interface in
standby state
100
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, I
2C interface in
standby state
3A
VCC = +5.5V @ +125°C, I
2C interface in
standby state
5A
VCC = +3.6V @ +85°C, I
2C interface in
standby state
2A
VCC = +3.6V @ +125°C, I
2C interface in
standby state
4A
ILkgDig
Leakage Current, at Pins A0, A1,
SHDN, SDA, and SCL
Voltage at pin from GND to VCC
-1
1
A
tDCP
(Note 12)
DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
(Note 12)
DCP Recall Time from Shutdown
Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on Recall Voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VCC Ramp VCC Ramp Rate
0.2
V/ms
tD
Power-up Delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and I2C Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature
°C
50
Years
tWC
(Note 13)
Non-volatile Write Cycle Time
12
20
ms
T+55
≤
ISL22319
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