参数资料
型号: ISL22349UFV14Z-TK
厂商: Intersil
文件页数: 8/13页
文件大小: 0K
描述: IC POT DGTL 128TP LN LP 14-TSSOP
标准包装: 1,000
系列: XDCP™
接片: 128
电阻(欧姆): 50k
电路数: 4
温度系数: 标准值 ±80 ppm/°C
存储器类型: 非易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 14-TSSOP
包装: 带卷 (TR)
4
FN6331.3
May 28, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 13)
TYP
(Note 3)
MAX
(Note 13)
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 10k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
2.5
mA
VCC Supply Current (volatile
write/read, non-volatile read)
VCC = +3.6V, 50k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
0.65
mA
ICC2
VCC Supply Current (non-volatile
write/read)
VCC = +5.5V, 10k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
4.0
mA
VCC Supply Current (non-volatile
write/read)
VCC = +5.5V, 50k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
3.0
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, I
2C interface in
standby state
2.4
mA
VCC = +3.6V, 10k DCP, I
2C interface in
standby state
525
A
VCC = +5.5V, 50k DCP, I
2C interface in
standby state
1.6
mA
VCC = +3.6V, 50k DCP, I
2C interface in
standby state
350
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, I
2C interface in
standby state
5A
VCC = +5.5V @ +125°C, I
2C interface in
standby state
6.5
A
VCC = +3.6V @ +85°C, I
2C interface in
standby state
4A
VCC = +3.6V @ +125°C, I
2C interface in
standby state
5.5
A
ILkgDig
Leakage Current, at Pins A0, A1, A2,
SHDN, SDA, and SCL
Voltage at pin from GND to VCC
-1
1
A
tWRT
(Note 11)
DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
(Note 11)
DCP Recall Time from Shutdown
Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on Recall Voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VccRamp
VCC Ramp Rate
0.2
V/ms
tD
Power-up Delay
Vcc above Vpor, to DCP Initial Value
Register recall completed, and I2C Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T < +55°C
50
Years
tWC
(Note 12)
Non-volatile Write Cycle Time
12
20
ms
ISL22349
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