参数资料
型号: ISL22419UFU8Z
厂商: Intersil
文件页数: 8/13页
文件大小: 0K
描述: IC POT DGTL 128TP LN LP 8-MSOP
标准包装: 50
系列: XDCP™
接片: 128
电阻(欧姆): 50k
电路数: 1
温度系数: 标准值 ±80 ppm/°C
存储器类型: 非易失
接口: 4 线 SPI(芯片选择)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 管件
4
FN6311.1
September 8, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(Note 3)
MAX
UNIT
ICC1
VCC Supply Current (volatile
write/read)
10k DCP, fSPI = 5MHz; (for SPI active, read
and write states)
1mA
VCC Supply Current (volatile
write/read)
50k DCP, fSPI = 5MHz; (for SPI active, read
and write states)
0.5
mA
ICC2
VCC Supply Current ( non-volatile
write/read)
10k DCP, fSPI = 5MHz; (for SPI active, read
and write states)
3.2
mA
VCC Supply Current ( non-volatile
write/read)
50k DCP, fSPI = 5MHz; (for SPI active, read
and write states)
2.7
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, SPI interface in
standby state
850
A
VCC = +5.5V, 50k DCP, SPI interface in
standby state
160
A
VCC = +3.6V, 10k DCP, SPI interface in
standby state
550
A
VCC = +3.6V, 50k DCP, SPI interface in
standby state
100
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, SPI interface in
standby state
3A
VCC = +5.5V@ +125°C, SPI interface in
standby state
5A
VCC = +3.6V @ +85°C, SPI interface in
standby state
2A
VCC = +3.6V @ +125°C, SPI interface in
standby state
4A
ILkgDig
Leakage Current, at Pins SHDN, SCK,
SDI, SDO and CS
Voltage at pin from GND to VCC
-1
1
A
tWRT
(Note 11)
Wiper Response Time
Wiper Response Time after SPI write to WR
register
1.5
s
tShdnRec
(Note 11)
DCP Recall Time from Shutdown
Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on Recall Voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VCC Ramp VCC Ramp Rate
0.2
V/ms
tD
Power-up Delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T
≤ +55°C
50
Years
tWC
(Note 9)
Non-volatile Write Cycle Time
From rising edge of CS
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
VIL
SHDN, SCK, SDI, and CS Input Buffer
LOW Voltage
-0.3
0.3*VCC
V
ISL22419
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