参数资料
| 型号： | ISL22449UFV14Z |
| 厂商： | Intersil |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC POT DGTL 128TP LN LP 14-TSSOP |
| 标准包装： | 96 |
| 系列： | XDCP™ |
| 接片： | 128 |
| 电阻（欧姆）： | 50k |
| 电路数： | 4 |
| 温度系数： | 标准值 ±80 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 4 线 SPI（芯片选择） |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 14-TSSOP |
| 包装： | 管件 |
4
FN6333.3
July 17, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(Note 3)
MAX
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
2.5
mA
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
0.65
mA
ICC2
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
4.0
mA
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
3.0
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, SPI interface in
standby state
2.4
mA
VCC = +5.5V, 50k DCP, SPI interface in
standby state
525
A
VCC = +3.6V, 10k DCP, SPI interface in
standby state
1.6
mA
VCC = +3.6V, 50k DCP, SPI interface in
standby state
350
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, SPI interface in
standby state
5A
VCC = +5.5V@ +125°C, SPI interface in
standby state
6.5
A
VCC = +3.6V @ +85°C, SPI interface in
standby state
4A
VCC = +3.6V @ +125°C, SPI interface in
standby state
5.5
A
ILkgDig
Leakage current, at pins SHDN, SCK,
SDI, SDO and CS
Voltage at pin from GND to VCC
-1
1
A
tWRT
(Note 13)
DCP wiper response time
SCK falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
(Note 13)
DCP recall time from shutdown mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on recall voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VccRamp
Vcc ramp rate
0.2
V/ms
tD
Power-up delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature
T < +55°C
50
Years
tWC
(Note 11)
Non-volatile Write cycle time
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
VIL
SHDN, SCK, SDI, and CS input buffer
LOW voltage
-0.3
0.3*VCC
V
ISL22449
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