参数资料
型号: ISL28133FRUZ-T7
厂商: Intersil
文件页数: 4/20页
文件大小: 0K
描述: IC OPAMP CHOPPER RRIO 6TDFN
产品培训模块: Patient Monitoring and Diagnostic Equipment Solutions
Solutions for Industrial Control Applications
标准包装: 3,000
放大器类型: 断路器(零漂移)
电路数: 1
输出类型: 满摆幅
转换速率: 0.2 V/µs
增益带宽积: 400kHz
电流 - 输入偏压: 30pA
电压 - 输入偏移: 2µV
电流 - 电源: 18µA
电流 - 输出 / 通道: 26mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V,±0.9 V ~ 2.75 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-UFDFN 裸露焊盘
供应商设备封装: 6-UTDFN-EP(1.6x1.6)
包装: 带卷 (TR)
ISL28133
12
FN6560.6
February 19, 2014
Long Term VOS Drift
Figure 37 shows a plot of daily VOS drift measurements of 30
individual ISL28133 amplifiers over a continuous 572 day period
at +25°C. The 30 units were connected in a gain of 10k,
mounted on a single PC board and kept at room temp. The 30
amplifier outputs were measured daily by a DVM and scanner
under computer control. The daily VOS measurements were
subtracted from the initial VOS value to calculate the VOS shift.
The test board was powered from a UPS to maintain
uninterrupted power to the test units. Three instances of lost
measurement data ranging from 2 days to 2 weeks due to power
loss to the measurement scanner were detected, and data were
interpolated.
The change in amplifier VOS over the 572 day period for all 30
amplifiers (see Figure 38) was less than ±100nV, and no clear
VOS long term drift trend was evident in the data. The excellent
long term drift performance is a result of the chopper amplifier’s
ability to measure and correct VOS errors, leaving only the VOS
error contribution due to changes in the long term stability of the
external components (see Figure 39).
ISL28133 SPICE Model
Figure 40 shows the SPICE model schematic and Figure 41
shows the net list for the ISL28133 SPICE model. The model is a
simplified version of the actual device and simulates important
parameters such as noise, Slew Rate, Gain and Phase. The
model uses typical parameters from the ISL28133. The poles
and zeros in the model were determined from the actual open
and closed-loop gain and phase response. This enables the
model to present an accurate AC representation of the actual
device. The model is configured for ambient temperature of
+25°C.
Figures 42 through 49 show the characterization vs simulation
results for the Noise Density, Frequency Response vs Close Loop
Gain, Gain vs Frequency vs CL and Large Signal Step Response (4V).
FIGURE 37. LONG TERM DRIFT (VOS vs TIME) FOR 30 UNITS
FIGURE 38. LONG TERM DRIFT (VOS vs TIME) FOR A SINGLE UNIT
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90 120 180 240 300 360 420 480 540 600
V
O
S
(
V
)
TIME (DAYS)
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90 120 180 240 300 360 420 480 540 600
V
O
S
(
V
)
TIME (DAYS)
-
+
10
1k
VOUT
100k
10
100k
FIGURE 39. LONG TERM DRIFT TEST CIRCUIT
+2.5V
-2.5V
ACL = 10kV/V
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