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参数资料
| 型号： | ISL43L420IRZ-T |
| 厂商： | Intersil |
| 文件页数： | 13/13页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPDT 16QFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 4 x SPDT |
| 导通状态电阻： | 450 毫欧 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.1 V ~ 4.5 V |
| 电流 - 电源： | 60nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | ISL43L420IRZ-TCT |
9
FN6098.1
V+ and GND also power the internal logic and level shifters.
The level shifters convert the input logic levels to switched
V+ and GND signals to drive the analog switch gate
terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2.0V to 3.6V (See Figure 16). At 3.6V
the VIH level is about 1.27V. This is still below the 1.8V
CMOS guaranteed high output minimum level of 1.4V, but
noise margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50
systems, the signal response is reasonably flat even
past 30MHz with a -3dB bandwidth of 104MHz (See Figure 19).
The frequency response is very consistent over a wide V+
range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. Off Isolation is
the resistance to this feedthrough, while Crosstalk indicates
the amount of feedthrough from one switch to another.
Figure 20 details the high Off Isolation and Crosstalk
rejection provided by this part. At 100kHz, Off Isolation is
about 68dB in 50
systems, decreasing approximately 20dB
per decade as frequency increases. Higher load
impedances decrease Off Isolation and Crosstalk rejection
due to the voltage divider action of the switch OFF
impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND. One of
these diodes conducts if any analog signal exceeds V+ or
GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 10. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
01
2
345
0.18
0.19
0.2
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.3
0.31
R
ON
(
)
VCOM (V)
ICOM = 100mA
V+ = 3V
V+ = 2.7V
V+ = 4.3V
V+ = 3.6V
R
ON
(
)
VCOM (V)
0
0.511.5
2
0
0.5
1
1.5
2
2.5
3
ICOM = 100mA
V+ = 1.5V
V+ = 1.1V
V+ = 1.8V
V+ = 1.65V
ISL43L420
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