参数资料
型号: ISL54502IHZ-T
厂商: Intersil
文件页数: 13/13页
文件大小: 0K
描述: IC SWITCH SPDT SOT23-6
标准包装: 3,000
功能: 开关
电路: 1 x SPST- NC
导通状态电阻: 5 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
电流 - 电源: 20nA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
ISL54501, ISL54502
9
FN6550.3
May 6, 2013
V+ and GND also power the internal logic and level shiftier. The
level shiftier converts the input logic levels to switched V+ and
GND signals to drive the analog switch gate terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes negative
in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2V to 3.6V (see Figure 14). At 3.6V the
VIH level is about 0.98V. This is still below the 1.8V CMOS
guaranteed high output minimum level of 1.4V, but noise
margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving the
digital input signals from GND to V+ with a fast transition time
minimizes power dissipation.
High-Frequency Performance
In 50
Ω systems, the ISL54501, ISL54502 has a -3dB
bandwidth of 350MHz (see Figure 15). The frequency response
is very consistent over a wide V+ range, and for varying analog
signal levels.
An OFF switch behaves like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to output. Off isolation is the
resistance of this signal feedthrough. Figure 16 details the
high off isolation provided by the ISL54501, ISL54502. At
1MHz, off isolation is about 75dB in 50
Ω systems, decreasing
approximately 20dB per decade as frequency increases.
Higher load impedances decrease off isolation due to the
voltage divider action of the switch OFF impedance and the
load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected between
each analog-signal pin and both V+ and GND. One of these diodes
conducts if any analog signal exceeds V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced, they
are reverse biased differently. Each is biased by either V+ or
GND and the analog signal. This means their leakages will vary
as the signal varies. The difference in the two diode leakages
to the V+ and GND pins constitutes the analog-signal-path
leakage current. All analog leakage current flows between
each pin and one of the supply terminals, not to the other
switch terminal. This is why both sides of a given switch can
show leakage currents of the same or opposite polarity. There
is no connection between the analog signal paths and V+ or
GND.
Typical Performance Curves T
A = +25°C, Unless Otherwise Specified
FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH
VOLTAGE
FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE
r ON
(
Ω
)
VCOM (V)
01
2345
0
1
2
3
4
5
6
7
8
ICOM = 100mA
V+ = 2.7V
V+ = 3V
V+ = 4.5V
V+ = 5V
r ON
(
Ω
)
VCOM (V)
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ICOM = 100mA
+25°C
+85°C
-40°C
6
V+ = 4.5V
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