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参数资料
| 型号： | ISL55143 |
| 厂商： | Intersil Corporation |
| 英文描述： | High-Speed 18V CMOS Comparators(高速18V CMOS比较器) |
| 中文描述： | 高速18V的CMOS比较器（高速18V的的CMOS比较器） |
| 文件页数： | 4/14页 |
| 文件大小： | 370K |
| 代理商： | ISL55143 |
4
FN6230.0
July 17, 2006
pO
Recommended Operating Conditions
Absolute Maximum Ratings
Thermal Information
V
CC
to V
EE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 19V
Input Voltages
PD, CV
AX
, CV
BX
, V
INPX
, V
OH
, V
OL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V
EE
-0.5V) to (V
CC
+0.5V)
Output Voltage
Q
AX
, Q
BX
. . . . . . . . . . . . . . . . . . . . . (V
OL
-0.5V) to (V
OH
+0.5V)
Thermal Resistance (Typical, Note 1, 2)
16 Ld QFN Package. . . . . . . . . . . . . . . . . . . . . . . . .
14 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .
20 Ld QFN Package. . . . . . . . . . . . . . . . . . . . . . . . .
20 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .
36 Ld QFN Package. . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
θ
JA
(°C/W)
75
90
65
80
45
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. Device temperature is closely tied to data-rates, driver loads and overall pin activity. Review Power Dissipation Considerations for more
information.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Device Power
V
CC
-V
EE
10
15
18
V
Comparator Output High Rail
V
OH
V
EE
+1
V
CC
-0.5
V
Comparator Output Low Rail
V
OL
V
EE
+0.5
V
EE
+6
V
Common Mode Input Voltage Range
V
CM
V
EE
V
CC
-5
V
Ambient Temperature
T
A
-40
27
+85
°C
Junction Temperature
T
J
+125
°C
Electrical Specifications
Test Conditions: V
CC
= 12V, V
EE
= -3V, V
OH
= 5V, V
OL
= 0V, PD = V
EE
, C
LOAD
= 15pF
,
T
A
=
25°C, unless
otherwise specified.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Input Offset Voltage
V
OS
I
BIAS
I
PD
t
PD
t
PU
CV
AX
= CV
BX
= 1.5V
V
INPX
- CV
(A/B)X
= ±5V
PD = V
CC
-50
50
mV
Input Bias Current
10
25
nA
Power-down Current
8
25
μA
Power-down Time (Note 5)
10
μs
Power-up Time (Note 5)
15
μs
TIMING CHARACTERISTICS
Propagation Delay
t
pd
t
r
t
f
Δ
t
pd
F
MAXR
t
WIDR
4.0
9.5
15
ns
Rise Time (Note 5)
1.4
ns
Fall Time (Note 5)
1.5
ns
Propagation Delay Mismatch
0.5
2
ns
Maximum Operating Frequency
Symmetry 50%
65
MHz
Min Pulse Width
7.7
ns
COMPARATOR INPUT
Input Current
I
IN
V
INPX
= V
CC
or V
EE
-100
0
100
nA
Input Capacitance (Note
5
)
C
IN
2.5
pF
ISL55141, ISL55142, ISL55143
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