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| 型号： | ISL60002DAH333Z-TK |
| 厂商： | Intersil |
| 文件页数： | 34/38页 |
| 文件大小： | 0K |
| 描述： | IC VREF SERIES PREC 3.3V SOT23-3 |
| 产品培训模块： | Solutions for Test and Measurement Equipment |
| 标准包装： | 1 |
| 系列： | FGA™ |
| 基准类型： | 串联，精度 |
| 输出电压： | 3.3V |
| 容差： | ±5mV |
| 温度系数： | 20ppm/°C |
| 输入电压： | 3.5 V ~ 5.5 V |
| 通道数： | 1 |
| 电流 - 静态： | 700nA |
| 电流 - 输出： | 20mA |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1249 (CN2011-ZH PDF) |
| 其它名称： | ISL60002DAH333Z-TKDKR |
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ISL60002
High Current Application
2.502
2.5001
2.500
2.498
V IN = 5V
2.4998
2.4995
2.496
2.494
2.492
2.490
2.488
V IN = 3.3V
V IN = 3.5V
2.4992
2.4989
2.4986
2.4983
3.2V IN , +85°C
3.3V IN , +85°C
5V IN , +85°C
2.486
0
5
10
15
20
25
30
2.4980
0
4
8
12
16
20
24
28
32
I LOAD (mA)
FIGURE 115. DIFFERENT V IN AT ROOM TEMPERATURE
Applications Information
FGA Technology
The ISL60002 series of voltage references use the floating gate
technology to create references with very low drift and supply
current. Essentially, the charge stored on a floating gate cell is
set precisely in manufacturing. The reference voltage output
itself is a buffered version of the floating gate voltage. The
resulting reference device has excellent characteristics which are
unique in the industry: very low temperature drift, high initial
I LOAD (mA)
FIGURE 116. DIFFERENT V IN AT HIGH TEMPERATURE
can remain powered up between conversions as shown in
Figure 117. Data acquisition circuits providing 12 to 24 bits of
accuracy can operate with the reference device continuously
biased with no power penalty, providing the highest accuracy and
lowest possible long term drift.
Other reference devices consuming higher supply currents will
need to be disabled in between conversions to conserve battery
capacity. Absolute accuracy will suffer as the device is biased and
requires time to settle to its final value, or, may not actually settle
to a final value as power on time may be short.
accuracy, and almost zero supply current. Also, the reference
voltage itself is not limited by voltage bandgaps or zener settings,
so a wide range of reference voltages can be programmed
V IN = +3.0V
10μF
0.01μF
V OUT
(standard voltage settings are provided, but customer-specific
voltages are available).
The process used for these reference devices is a floating gate
CMOS process, and the amplifier circuitry uses CMOS transistors
for amplifier and output transistor circuitry. While providing
excellent accuracy, there are limitations in output noise level and
load regulation due to the MOS device characteristics. These
limitations are addressed with circuit techniques discussed in
other sections.
Nanopower Operation
Reference devices achieve their highest accuracy when powered
up continuously, and after initial stabilization has taken place.
V IN
ISL60002-25
VOUT = 2.5V
GND
0.001μF TO 0.01μF
SERIAL
BUS
REF IN
ENABLE
SCK
SDAT
12 TO 24-BIT
A/D CONVERTER
This drift can be eliminated by leaving the power on continuously.
The ISL60002 is the first high precision voltage reference with
ultra low power consumption that makes it possible to leave
power on continuously in battery operated circuits. The ISL60002
consumes extremely low supply current due to the proprietary
FGA technology. Supply current at room temperature is typically
350nA, which is 1 to 2 orders of magnitude lower than
competitive devices. Application circuits using battery power will
benefit greatly from having an accurate, stable reference, which
essentially presents no load to the battery.
In particular, battery powered data converter circuits that would
normally require the entire circuit to be disabled when not in use
34
FIGURE 117.
Board Mounting Considerations
For applications requiring the highest accuracy, board mounting
location should be reviewed. Placing the device in areas subject to
slight twisting can cause degradation of the accuracy of the
reference voltage due to die stresses. It is normally best to place the
device near the edge of a board, or the shortest side, as the axis of
bending is most limited at that location. Obviously mounting the
device on flexprint or extremely thin PC material will likewise cause
loss of reference accuracy.
FN8082.19
January 16, 2014
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL60002DIB812 | 功能描述:IC VREF SERIES PREC 1.25V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电压基准 系列:FGA™ 标准包装:3,000 系列:- 基准类型:旁路，精度 输出电压:5V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:80µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3 包装:带卷 (TR) 其它名称:LM4040CIM3-5.0MLTRLM4040CIM3-5.0MLTR-ND |
| ISL60002DIB812-TK | 功能描述:IC VREF SERIES PREC 1.25V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电压基准 系列:FGA™ 标准包装:3,000 系列:- 基准类型:旁路，精度 输出电压:5V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:80µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3 包装:带卷 (TR) 其它名称:LM4040CIM3-5.0MLTRLM4040CIM3-5.0MLTR-ND |
| ISL60002DIB825 | 功能描述:IC VREF SERIES PREC 2.5V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电压基准 系列:FGA™ 标准包装:3,000 系列:- 基准类型:旁路，精度 输出电压:5V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:80µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3 包装:带卷 (TR) 其它名称:LM4040CIM3-5.0MLTRLM4040CIM3-5.0MLTR-ND |
| ISL60002DIB825-TK | 功能描述:IC VREF SERIES PREC 2.5V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电压基准 系列:FGA™ 标准包装:3,000 系列:- 基准类型:旁路，精度 输出电压:5V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:80µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3 包装:带卷 (TR) 其它名称:LM4040CIM3-5.0MLTRLM4040CIM3-5.0MLTR-ND |
| ISL60002DIH310Z | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
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