1. ?/DIV>
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. For ?/DIV>
JC
, the case temp location is the center of the exposed metal pad on the package underside.
3. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications   12VIN = 12V, 3VIN and VSTBY = +3.3V, T
A
= T
J
= -40癈 to +85癈, Unless Otherwise Specified.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP   MAX   UNIT
MAIN CURRENT REGULATION
Current Limit Threshold Voltages     VTHILIMIT
V
IN
V
SENSE
47.5
50    52.5   mV
Fast-Trip Threshold Voltages
VTHFAST
V
IN
V
SENSE
(ISL6113)
85
100    115   mV
V
IN
V
SENSE
(ISL6114)
140
150    160   mV
VSENSE Input Current
ISENSE
0.1
礎
CFILTER Threshold Voltage
VFILTER
1.20     1.25    1.30    V
CFILTER Charging Current
Nominal Current Limit Duration =
C
FILTER
x 550k
IFILTER
V
VIN
V
VSENSE
> V
THILIMIT
2
2.5     3    礎
tFILTER
CFILTER Open
10
祍
AUXILIARY CURRENT REGULATION
Regulated Current Level
ILIM(AUX)
From end of ISC(TRAN) to
CFILTER time-out
0.8
1
1.2    A
Output MOSFET Resistance VAUX
MOSFET
r
DS(AUX)
I
DS
= 375mA, T
J
= +125癈
350   m?/DIV>
Off-State Output Offset Voltage VAUX VOFF(VAUX)     VAUX = Off, T
J
= +125癈
40    mV
BIAS AND POWER GOOD
Supply Current
ICC12
Enabled with no load current
0.9     1.5    mA
ICC3.3
Enabled with no load current
0.1     0.2    mA
ICCSTBY
Enabled with no load current
5
6    mA
12VIN, 3VIN, VSTBY Undervoltage
Lockout Thresholds
VUVLO (12V)
12VIN increasing
8
9
10    V
VUVLO (3V)
3VIN increasing
2.1
2.5    2.75    V
VUVLO(STBY)    VSTBY increasing
2.8
2.9    2.96    V
Undervoltage Lockout Hysteresis
12VIN, 3VIN
VHYSUV
180
mV
ISL6113, ISL6114