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| 型号： | ISL6207HRZ-T |
| 厂商： | Intersil |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 带卷 (TR) |
ISL6207
Note: Refer to Intersil Tech Brief TB447 for more information.
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal
pad of the QFN part to the power ground with multiple vias,
or placing a low noise copper plane underneath the SOIC
part is recommended. This heat spreading allows the part to
achieve its full thermal potential.
Suppressing MOSFET Gate Leakage
With VCC at ground potential, UGATE and LGATE are high
impedance. In this state, any stray leakage has the potential
to deliver charge to either gate. If UGATE receives sufficient
charge to bias the device on (Note: Internal circuitry prevents
leakage currents from charging above 1.8V), a low
impedance path will be connected between the MOSFET
drain and PHASE. If the input power supply is present and
active, the system could see potentially damaging currents.
Worst-case leakage currents are on the order of pico-amps;
therefore, a 10k ? resistor, connected from UGATE to
PHASE, is more than sufficient to bleed off any stray leakage
current. This resistor will not affect the normal performance
of the driver or reduce its efficiency.
8
FN9075.8
December 2, 2005
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