参数资料
型号: ISL6208ACBZ
厂商: Intersil
文件页数: 7/10页
文件大小: 0K
描述: IC MOSFET DRVR SYNC BUCK 8-SOIC
标准包装: 980
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 26ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 33V
电源电压: 4.5 V ~ 5.5 V
工作温度: -10°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
ISL6208A
Diode Emulation
Diode emulation allows for higher converter efficiency under
FCCM = VCC or GND
light-load situations. With diode emulation active, the
ISL6208A will detect the zero current crossing of the output
inductor and turn off LGATE. This ensures that
discontinuous conduction mode (DCM) is achieved. Diode
emulation is asynchronous to the PWM signal. Therefore,
the ISL6208A will respond to the FCCM input immediately
after it changes state. Refer to the waveforms on page 6.
NOTE: Intersil does not recommend DCM mode use with r DS(ON)
current sensing topologies. The turn-OFF of the low side MOSFET
can cause gross current measurement inaccuracies.
Three-State PWM Input
A unique feature of the ISL6208A and other Intersil drivers is
1V
GATE A
GATE B
Adaptive Shoot-Through Protection
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
GATE A
FCCM = RESISTOR to VCC or GND
GATE B
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
1V
50
45
Adaptive Protection with Delay
t delay = 5n - 50ns
FIGURE 8. PROGRAMMABLE DEAD-TIME
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
In addition to gate threshold monitoring, a programmable
delay between MOSFET switching can be accomplished by
placing a resistor in series with the FCCM input. This delay
allows for maximum design flexibility over MOSFET
selection. The delay can be programmed from 5ns to 50ns
above the adaptive shoot-through protection and is obtained
from the absolute value of the current flowing into the FCCM
pin. If no resistor is used, the minimum 5ns delay is used.
Gate threshold monitoring is not affected by the addition or
40
35
30
25
20
15
10
5
t DELAY
removal of the additional dead-time. Refer to Figure 8 and
Figure 9 for more detail.
0
0
167
333
500
667
833
1000
R DELAY (k ? )
FIGURE 9. ISL6208A PROGRAMMABLE DEAD-TIME vs
DELAY RESISTOR
The equation governing the dead-time seen in Figure 9 is
expressed as:
T DELAY ( ns ) = [ 0.045 × R DELAY ( k ? ) ] + 5ns
7
FN9272.0
February 15, 2006
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